3300 V FS型IGBT器件研制  

Development of a 3300V Field Stop IGBT

作　　者：朱涛 刘江 高明超 冷国庆 赵哿 王耀华 金锐 温家良 潘艳 

机构地区：[1]全球能源互联网研究院功率半导体研究所,北京102211

出　　处：《固体电子学研究与进展》2017年第4期266-270,298,共6页Research & Progress of SSE

基　　金：国家电网公司科技项目(5455GB160001)

摘　　要：基于现有仿真及工艺平台,设计一款3 300V/50A场截止型绝缘栅双极晶体管器件(FS-IGBT),元胞采用场截止型平面栅结构,元胞注入采用自对准工艺,背面P型集电极采用透明集电极技术,降低导通状态的饱和压降。采用二维数值仿真主要研究了FS结构以及P^+集电极掺杂参数对器件性能的影响,通过参数拉偏仿真,重点分析了FS层和集电极P区注入剂量对器件参数的影响,确认了最佳的工艺窗口条件。通过合作方工艺平台对最终的结构进行了加工,最终测试结果显示IGBT器件通态压降为2.8V,击穿电压大于4 250V,关断损耗37mJ,开通损耗50mJ。A 3 300 V/50 A field stop insulator gate bipolar transistor （FS-IGBT） based on the existing simulation platform was designed, of which the cell using the field stop planar gate structure and self-aligned implantation scheme, and a transparent contact was used for the back p-type collector in order to reduce the saturation voltage drop in the on-state. The influence of the FS structure and the doping parameters of the p-type collector on the device performance was studied with the aid of 2D numerical simulation. By adjusting parameters in the simulation, the impact of the FS layer and the implantation dosage of the p-type collector on the device parame- ters were emphatically analyzed, and the optimal process conditions are confirmed. The devices are fabricated using such structures on our partner＇s processing platform, and the measurement results show that the saturation voltage drop is 2. 8 V, the breakdown voltage is higher than 4 250 V, the turn-off switching energy is 37 mJ and the tun-on switching energy is 50 mJ.

关 键 词：场截止型绝缘栅双极晶体管 击穿电压 饱和压降 关断损耗 

分 类 号：TN322.8[电子电信—物理电子学]