固态照明中SiC衬底材料产业化关键问题的研究  

Research on Several Key Problems in the Industrialization of SiC Crystals for Solid-State Lighting

作　　者：高攀[1] 忻隽[1] 严成锋[1] 黄维[1] 刘学超[1] 施尔畏[1] 

机构地区：[1]中国科学院上海硅酸盐研究所,上海201800

出　　处：《中国照明电器》2017年第12期1-6,共6页China Light & Lighting

基　　金：国家自然科学青年基金(61501437);国家重点研发计划项目(2016YFB0400400);上海市科技创新行动计划项目(17511106200);中国科学院科技服务网络计划项目(KFJ-SW-STS-156)

摘　　要：半导体照明行业已形成数百亿美元的产业规模,其中SiC衬底材料具有非常优异的性能,特别适合制造低能耗、大功率、长寿命的照明器件。本文主要围绕物理气相传输法(PVT)产业化制备大尺寸、低缺陷SiC晶体所需解决的4个关键问题展开研究讨论:高纯原料的制备提纯、热场的精确模拟、晶体缺陷的控制以及大尺寸SiC晶体的制备,最终实现高质SiC晶体材料的产业化建设和批量生产能力,为我国固态照明的发展提供关键的核心材料。It has formed hundreds of billions of dollars for the semiconductor lighting industry, in which the SiC substrate material has very excellent performance and it is especially suitable for manufacturing low energy consumption, high power and long life lighting devices. This paper focuses on solving the four key problems for producing large size and low defects of SiC crystals by the PVT method, such as the preparation and purification of the high purity raw material, the simulation of the temperature field, the control of the crystal defects and the growth of the large size SiC crystals. Finally it realizes the industrialization of the high quality SiC crystals and provides critical core materials for the development of the China＇s solid-state lighting.

关 键 词：固态照明 碳化硅 物理气相传输法 晶体生长 

分 类 号：TN304.24[电子电信—物理电子学]