基于磁控溅射和ICP刻蚀的RB-SiC表面平坦化工艺  

Surface Planarization Process of RB-SiC Based on Magnetron Sputtering and ICP Etching

作　　者：赵杨勇 刘卫国[1] 惠迎雪[1] 

机构地区：[1]西安工业大学陕西省薄膜技术与光学检测重点实验室,西安710021

出　　处：《光子学报》2018年第3期1-7,共7页Acta Photonica Sinica

基　　金：国防基础科研项目(No.JCKY2016208A002);陕西省科技厅重点实验室项目(No.2013SZS14-Z02);陕西省教育厅重点实验室科研计划项目(No.15JS032)资助~~

摘　　要：采用射频磁控溅射技术在RB-SiC表面沉积Si平坦化层,通过正交试验研究了射频功率、Ar流量和工作气压三个因素对薄膜表面质量和形貌的影响规律,以获取最佳的薄膜沉积参数.射频功率120 W、工作气压1.2Pa和Ar流量40sccm条件下获得了最佳质量的平坦化样品,利用电感耦合等离子体对平坦化膜层进行刻蚀抛光,通过Lambda950分光光度计测试不同工艺阶段样品表面的反射率.结果表明,相比于未处理的RB-SiC初始样品,经过平坦化和等离子体刻蚀的样品表面粗糙度标准差值由1.819nm减小至0.919nm,样品表面反射率相应地提高了2%.由此说明射频磁控溅射平坦化沉积与电感耦合等离子体刻蚀的组合工艺可实现RB-SiC表面的高质量加工.Si thin film as planarizing layer were deposited on Reaction Bonded-SiC（RB-SiC）substrate by using RF magnetron sputtering technique.A set of orthogonal experiments were designed and performed to determine an optimized process condition by characterizing the evolution of the quality and surface morphology of the Si films deposited at various sputtering power,working pressure and Argon flow rate.The planarization was obtained at sputtering power of 120 W,working pressure of 1.2 Pa and Argon flow rate of 40 sccm.Then smoothing of inductively coupled plasma（ICP）etching was performed and the surface reflectivity of samples processed under different treatment stages was investigated by using Lambda 950 spectrophotometer.The results show that the surface roughness Sq of RB-SiC sample under planarization and ICP etching process is reduced from 1.819 nm to 0.919 nm compared with untreated RBSiC sample,and the surface reflectivity of the sample increased by 2%.Therefore the combinatorial optical polishing technology based planarization with RF magnetron sputtering and ICP etching process can enhance the performance of RB-SiC surface finishing.

关 键 词：光学制造 超光滑表面 射频磁控溅射 RB-SIC Si平坦化层 正交试验 ICP刻蚀 表面粗糙度 

分 类 号：O484[理学—固体物理] TN304[理学—物理]