In0.53Ga0.47As/InP雪崩光电二极管响应及电学特性  

Response and Electrical Characteristics of In_(0.53)Ga_(0.47)As/InP Avalanche Photodiode

作　　者：袁正兵 肖清泉 杨文献 肖梦 吴渊渊 谭明 代盼 李雪飞 谢泉 陆书龙 

机构地区：[1]贵州大学大数据与信息工程学院,贵阳550025

出　　处：《光子学报》2018年第3期107-112,共6页Acta Photonica Sinica

基　　金：江苏省科技支撑计划(No.BE2016085); 中国科学院重点前沿科学研究项目(No.QYZDB-SSW-JSC014)资助

摘　　要：通过分子束外延生长和开管式Zn扩散方法,制备了低暗电流、宽响应范围的In_(0.53)Ga_(0.47)As/InP雪崩光电二极管.在0.95倍雪崩击穿电压下,器件暗电流小于10nA;-5V偏压下电容密度低至1.43×10^(-8) F/cm^2.在1 310nm红外光照及30V反向偏置电压下,雪崩光电二极管器件的响应范围为50nW^20mW,响应度达到1.13A/W.得到了电荷层掺杂浓度、倍增区厚度结构参数与击穿电压和贯穿电压的关系:随着电荷层电荷密度的增加,器件贯穿电压线性增加,而击穿电压线性降低;电荷层电荷面密度为4.8×10^(12)cm^(-2)时,随着倍增层厚度的增加,贯穿电压线性增加,击穿电压增加.通过对器件结构优化,雪崩光电二极管探测器实现25V的贯穿电压和57V的击穿电压,且具有低暗电流和宽响应范围等特性.In（0.53）Ga（0.47）As/InP Avalanche Photodiode（APD）with low dark current,wide-range response is prepared by molecular beam epitaxy and open-tube zinc diffusion method.The dark current is less than10 nA at 0.95 Vb（Vbis the avalanche breakdown voltage）,and the capacitance density is as low as 1.43×10^-8 F/cm^2 when the bias voltage is-5 V.The response range of APD is 50 nW-20 mW and the responsibility is up to 1.13 A/W under 1 310 nm infrared laser at 30 V reverse bias voltage.The breakdown voltage and punch-through voltage are investigated by changing concentration of the charge layer and thickness of the multiplication layer.The result shows that the punch-through voltage increases linearly,conversely,the breakdown voltage decreases linearly with increasing concentration of the charge layer.Further,the punch-through voltage increases linearly and breakdown voltage also increases with increasing thickness of the multiplication layer,while the surface density of charge layer is 4.8×10^12 cm^-2.Through optimizing SAGCM-APD device structure,the APD device achieves a 25 Vpunchthrough voltage and a 57 V breakdown voltage,with low dark current,and wide-range response characteristics.

关 键 词：雪崩光电二极管 低暗电流 宽响应范围 分子束外延 ZN扩散 

分 类 号：TN364[电子电信—物理电子学]