高性能非平面沟道场效应晶体管  

High performance non-planar channel field-effect transistor

作　　者：张茂林 郭宇锋[1,2] 李曼 陈静[1,2] 田涛 童祎 

机构地区：[1]南京邮电大学电子科学与工程学院,江苏南京210023 [2]射频集成与组装技术国家与地方联合工程实验室,江苏南京210023

出　　处：《应用科技》2018年第1期51-55,60,共6页Applied Science and Technology

基　　金：国家自然科学基金项目(61574081);江苏省自然科学基金项目(BK20141431);江苏省工业支撑计划项目(BE2013130)

摘　　要：半导体器件的高速化、集成化要求其特征尺寸不断缩小,不可避免地导致短沟道效应,从而使得器件性能退化。提出了一种非平面沟道晶体管,利用二维半导体器件仿真软件SILVACO对其阈值电压退化、亚阈值特性和衬底电流进行了研究,并通过能带图、电势分布图和电场分布图探讨了其物理机理。研究表明非平面沟道晶体管可以很好地抑制阈值电压退化,改善器件的亚阈值特性,降低漏电流和衬底电流,提高击穿电压,从而抑制短沟道效应,提高器件的可靠性。The high speed and integration of semiconductor devices require shrinking feature size, this will lead to the short-channel effect inevitably and cause degradation of device performance. A non-planar channel transistor was proposed in this paper, the two-dimensional semiconductor simulation software SILVACO was utilized to investigate the degradation of threshold voltage, sub-threshold characteristics and substrate current. Furthermore, the physical mechanism was researched by the energy band diagram, potential distribution and electric field distribution. The resuits show that the proposed transistor can suppress the degradation of threshold voltage, improve sub-threshold characteristics, reduce the leakage current, substrate current and increase the breakdown voltage, so as to suppress the short-channel effect and improve the reliability of the device.

关 键 词：短沟道效应 场效应晶体管 非平面沟道 阈值电压 亚阈值特性 

分 类 号：TN386[电子电信—物理电子学]