PECVD沉积参数对非晶硅向微晶硅薄膜转化的影响  

Influence of PECVD Deposition Parameters on the Transition from Amorphous Silicon to Microcrystalline Silicon Films

作　　者：翁秀章 周炳卿[1] 谷鑫 

机构地区：[1]内蒙古师范大学物理与电子信息学院功能材料物理与化学自治区重点实验室,呼和浩特010022

出　　处：《人工晶体学报》2018年第2期297-301,共5页Journal of Synthetic Crystals

基　　金：国家自然科学基金(51262022)

摘　　要：采用等离子体增强化学气相沉积(PECVD)系统,以硅烷和氢气为反应气源,通过改变射频功率、硅烷浓度来制备氢化硅基薄膜材料。研究了沉积参数的变化对硅基薄膜材料微结构的影响。通过红外吸收谱、紫外可见光谱以及X射线衍射谱对样品材料进行表征。实验结果表明,随着射频功率的增加,薄膜中氢含量也相应地增大,而光学带隙表现出先增大后减小的规律。当硅烷浓度逐渐降低时,薄膜材料的光学带隙相应地降低,并从非晶硅薄膜逐渐向微晶硅薄膜材料转变,且薄膜材料在(111)方向的晶粒尺度达到了10.92 nm。实现了在高沉积压强、大射频功率、低硅烷浓度条件下可以有效优化改善硅基薄膜质量。Hydrogenated silicon-based thin film materials were prepared by adopting a plasma enhanced chemical vapor deposition （PECVD） system, taking Sill4 and I-I2 as a reaction gas source, and changing radio frequency （RF） power and silane concentration. The effects of deposition parameters on the microstructure of Si-based thin film materials were studied. Sample materials were characterized by infrared absorption spectrum, ultraviolet-visible （UV-Vis） spectra and X-ray （XRD） diffraction patterns. The results show that, with the increase of the RF power, hydrogen content in the film increased accordingly, while optical band gap increased first, then decreased. When the silane concentration is reduced, the optical band gap of the thin film materials decreased accordingly, and the thin film materials transferred from amorphous silicon thin film materials to microcrystalline silicon thin film materials. Meanwhile, a grain size of the thin film materials along a （ 111 ） direction reached 10.92 nm. Therefore, under the conditions of higher pressure, higher RF power and low silane concentration, the quality of the Si-based thin film materials can be effectively improved.

关 键 词：非晶硅薄膜 PECVD 微晶硅薄膜 微结构 

分 类 号：O484[理学—固体物理]