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作 者:刘国瑞 刘玉岭[1] 栾晓东[1] 王辰伟[1] 牛新环[1]
机构地区:[1]河北工业大学微电子研究所,天津300130 [2]天津城建大学计算中心,天津300380
出 处:《微纳电子技术》2018年第3期201-205,223,共6页Micronanoelectronic Technology
基 金:国家中长期科技发展规划科技重大专项(2016ZX02301003);河北省自然科学基金资助项目(E2013202247);河北省自然科学基金青年基金资助项目(F2015202267);河北省教育厅科研基金资助项目(QN2014208);天津市自然科学基金资助项目(16JCYBJC16100)
摘 要:分别选用FA/O螯合剂和甘氨酸作为络合剂配置铜布线CMP抛光液,研究对比了两种抛光液的抛光速率、静态腐蚀溶解速率、平坦化以及稳定性。速率实验表明,抛光液中加入FA/O螯合剂和甘氨酸都可以显著提高铜的抛光速率,基于甘氨酸配置的抛光液静态腐蚀溶解速率为335.1 nm,明显高于基于FA/O螯合剂配置的抛光液(89.2 nm)。平坦化实验表明,基于甘氨酸配置的抛光液对铜线条高低差的修正能力差,需要加入缓蚀剂,而基于FA/O螯合剂配置的无缓蚀剂碱性抛光液能够有效修正铜线条高低差。稳定性实验表明,基于FA/O螯合剂配置的无缓蚀剂碱性铜抛光液稳定时间只有1天,而基于甘氨酸配置的碱性铜抛光液稳定时间为5天。通过实验研究发现,抛光液中FA/O螯合剂与H2O2发生化学反应也是导致抛光液不稳定的原因。The Cu interconnection CMP slurries were prepared using the FA/O chelating agent and glycine,respectively.The polishing rate,static corrosion dissolution rate,planarization and stability of the two slurries were studied and compared.The rate experiment shows that the FA/O chelating agent and glycine can significantly improve the copper polishing rate.The static corrosion rate of the slurry based on the glycine is 335.1 nm,which is significantly higher than that(89.2 nm)of the slurry based on the FA/O chelating agent.The planarization experiment shows that the slurry based on the glycine has a poor ability of revising the height difference of copper lines,and needs adding the corrosion inhibitor.However,the alkaline slurry without the corrosion inhibitor based on the FA/O chelating agent can effectively correct the height difference of copper lines.The stability experiment shows that the settling time of the alkaline copper slurry without the corrosion inhibitor based on the FA/O chelating agent is only 1 day,while the settling time of the alkaline copper slurry based on the glycine is 5 days.The experimental study shows that the chemical reaction of the FA/O chelating agent and H2O2 is another reason for the instability of the slurry.
分 类 号:TN305.2[电子电信—物理电子学]
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