高g微机械加速度传感器芯片盖帽封装设计  

Design of the Cap Package of High-g Micromachine Acceleration Sensor Chips

作　　者：康强[1,2] 石云波[1,2] 杨志才[1,2] 赵永琪 许鑫 王彦林 焦静静 Kang Qiang,Shi Yunbo,Yang Zhicai,Zhao Yongqi,Xu Xin,Wang Yanlin,Jiao Jingjing(a. Key Laboratory of Instrumentation Science ＆ Dynamic Measurement of Ministry of Education ; b. Science and Technology on Electronic Test and Measurement Laboratory, North University of China, Taiyuan 030051, Chin)

机构地区：[1]中北大学仪器科学与动态测试教育部重点实验室,太原030051 [2]中北大学电子测试技术重点实验室,太原030051

出　　处：《微纳电子技术》2018年第4期252-257,共6页Micronanoelectronic Technology

基　　金：国家自然科学基金杰出青年科学基金资助项目(51225504)

摘　　要：为了提高高g微机械加速度传感器在极端恶劣环境中应用的可靠性,根据自制的高g微机械加速度传感器芯片,研究设计了一种新型＂台阶式＂传感器芯片的盖帽封装结构。利用圆片级键合工艺和有限元分析（FEA）方法确定了盖帽封装结构材料与尺寸的设计方案。优化微电子机械系统（MEMS）加工工艺流程完成对盖帽封装结构的加工,并通过数字电子拉力机对实现圆片级盖帽封装的传感器芯片进行键合强度测试。测试结果表明,键合强度为35 000 kPa,远大于抗过载封装设计要求下的键合强度值（401.2 kPa）,证明了盖帽封装结构设计的可行性和可靠性。In order to improve the reliability of high-g micromachine acceleration sensors in extreme environments,a new cap package structure of the sensor chip with ＂stairs type＂ was researched and designed based on the home-made high-g micromachine acceleration sensor chip.The design schemes of the cap packaging material and dimension were determined by using the wafer-level bonding process and finite element analysis（FEA）method.The process flow of the micro-electromechanical system（MEMS）was optimized to complete the processing of the cap package structure.The bonding strength test of the sensor chip with wafer-level cap package was completed by the digital rally.The test results show that the bonding strength is 35 000 kPa and is much larger than the bonding strength value（401.2 kPa）under anti-overload packaging design requirements.The feasibility and reliability of the new cap package structure were proved.

关 键 词：微机械 盖帽封装 有限元分析(FEA)方法 圆片级 键合强度 

分 类 号：TN305.94[电子电信—物理电子学]