MBE生长高功率列阵激光器的研究  

HIGH POWER ARRAY SEMICONDUCTOR LASER GROWN BY MBE

作　　者：李忠辉[1] 王玲[1] 王玉霞[1] 杨进华[1] 张兴德[1] 

机构地区：[1]长春理工大学高功率半导体激光国家重点实验室,吉林长春130022

出　　处：《兵工学报》2002年第3期430-432,共3页Acta Armamentarii

摘　　要：利用V8 0型MBE生长GaAlAs/GaAs梯度折射率分别限制单量子阱 (GRIN SCH SQW )结构。测试结果表明 ,该结构晶格和光学质量符合设计要求。制成激光器列阵 ,室温连续输出功率达7 2W ,峰值波长为 80 7～ 80 9nm ,经柱透镜光纤耦合后的光强远场分布为θ∥ =8° ,θ⊥ =3.5° .GaAlAs/GaAs material having gradient refraction index, and a separate confinement single quantum well structure has been grown by MBE. Experimental results show that the sample's quality reached the design requirements. The CW output power of the array laser diodes is up to 7.2 W with a peak wavelength of 807nm to 809nm.

关 键 词：MBE 生长 分子束外延 列阵激光器 分别限制 量子阱 

分 类 号：TN248.4[电子电信—物理电子学]