三级台面InGaAs/InP雪崩光电二极管的低边缘电场设计  

Design of Triple-mesa InGaAs/InP Avalanche Photodiode with Low Edge Electric Field

作　　者：朱帅宇 谢生 陈宇[2] ZHU Shuai-yu1 , XIE Sheng1 , CHEN Yu2(1 Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, School of Microelectronics, Tianjin University, Tianjin 300072, China;2 Institute of Semiconductors, Chinese Academy of Sciences, Beij ing 100084, Chin)

机构地区：[1]天津大学微电子学院天津市成像与感知微电子技术重点实验室,天津300072 [2]中国科学院半导体研究所,北京100084

出　　处：《光子学报》2018年第4期75-81,共7页Acta Photonica Sinica

基　　金：国家自然科学基金(No.11673019);广西精密导航技术与应用重点实验室基金项目(No.DH201710)资助~~

摘　　要：设计了一种三级台面的InGaAs/InP雪崩光电二极管,解决了器件边缘电场和暗电流较高的问题.采用Silvaco Atlas器件仿真软件分析了边缘间距、电荷层掺杂浓度及厚度、倍增层掺杂浓度及厚度对器件性能的影响.仿真结果表明,本文设计的三级台面器件在边缘间距为8μm时有最优器件尺寸和较低边缘电场.采用掺杂浓度为1×10^(17)cm^(-3)、厚度为0.2μm的电荷层和掺杂浓度为2×10^(15)cm^(-3)、厚度为0.4μm的倍增层,成功将高电场限制在中心区域,使得反偏电压40V时的边缘电场降低至2.6×105V/cm,仅为中心电场的1/2,增强了器件的抗击穿能力.此外,本文设计的器件在0.9 V_(br)时的暗电流降低至9.25pA,仅为传统两级台面器件的1/3.To eliminate the edge breakdown and reduce the dark current of conventional InGaAs/InP avalanche photodiode,a novel avalanche photodiode with triple-mesa structure was proposed.The effects of edge distance,doping concentration and thickness of charge layer and multiplication layer on the device performance were systematically investigated by a commercial simulator.The simulation results shown that the device was possessed of low edge electric field and reasonable device size,when the edge distance was 8 μm.In this design,the high electric field was confined within the center of device and the breakdown voltage was improved.The edge electric field of optimized device was only 2.6×10~5 V/cm,which was a half of central region at 40 V reverse voltage.What＇s more,it can reduce dark current to 9.25 pA at 0.9 Vbr,which was only 1/3 for the dark current of traditional double-mesa avalanche photodiode.

关 键 词：铟镓砷 三级台面 雪崩光电二极管 暗电流 边缘电场 贯穿电压 击穿电压 

分 类 号：TN364[电子电信—物理电子学] TN215