Ka波段GaN单片低噪声放大器研制  

Fabrication of Ka-band GaN MMIC LNA

作　　者：吴少兵[1,2] 李建平 李忠辉[1,2] 高建峰[1] 黄念宁 WU Shaobing;LI Jianping;LI Zhonghui;GAO Jianfeng;HUANG Nianning(Nanjing Electronic Devices Institute, Nanjing, 210016, CHN;Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanj ing , 210016, C H N)

机构地区：[1]南京电子器件研究所,南京210016 [2]微波毫米波单片集成和模块电路重点实验室,南京210016

出　　处：《固体电子学研究与进展》2018年第2期81-84,94,共5页Research & Progress of SSE

摘　　要：报道了Ka波段GaN自偏压低噪声三级放大电路的研制结果。在高Al含量的AlGaN/GaN HEMT外延结构上,采用电子束直写工艺制备了栅长100nm的"T"型栅结构。器件直流测试最大电流密度为1.55A/mm,最大跨导为490mS/mm;小信号测试外推其fT和fmax分别为95GHz及230GHz。采用该工艺制备的自偏压三级放大电路工作电压7V,在33~47GHz小信号增益大于20dB,噪声系数均值在2dB左右,单频点噪声系数可达1.6dB,噪声水平达到GaN器件在该频段的高水平。此外,该单片电路的功耗在560mW左右,带内连续波测试输出P-1>15dBm。The fabrication of a self-bias three-stage Ka-band AlGaN/GaN low-noise MMIC was reported.Electron-beam lithography was employed to define a 100 nm T-shaped gate on the AlGaN/GaN HEMT structure with high aluminum content.The HEMT exhibits a maximum dc drain current density of 1.55 A/mm and an extrinsic trans-conductance of 490 mS/mm.An extrinsic current gain cutoff frequency（fT）of 95 GHz and a maximum oscillation frequency（fmax）of 230 GHz are deduced fromS-parameter measurements.At a bias of VD=7 V,the MMIC LNA offers an average noise-figure of 2 dB with an associated small signal gain greater than 20 dB and a minimum noise figure of 1.6 dB at 33~47 GHz.The measured output P-1 achieves 15 dBm in continuous-wave mode with 560 mW power dissipation.

关 键 词：GAN高电子迁移率晶体管 KA波段 电子束直写 低噪声放大器 

分 类 号：TN492[电子电信—微电子学与固体电子学]