GaN基半导体技术的空间应用研究与展望  

Study and Outlook of GaN-based Semiconductor Technology on Space Applications

作　　者：唐林江 陈滔 张宝林 万成安 TANG Linjiang;CHEN Tao;ZHANG Baolin;WAN Chengan(Beijing Spacecrafts,Beijing 100094,China)

机构地区：[1]北京卫星制造厂,北京100094

出　　处：《空间电子技术》2018年第2期60-67,共8页Space Electronic Technology

摘　　要：空间太阳能电站需要高效率、良好环境适应性和长寿命的新型光电转换材料和大功率半导体器件。从功率器件和太阳能电池两个方面,概述了宽禁带半导体在太阳能技术中的应用和研发动态。采用宽禁带半导体设计的GaN高效固态功放和禁带宽度从0.7 eV(InN)~3.4 eV(GaN)连续可调的InGaN直接带隙的太阳能电池具有可靠性高、效率高、体积小、质量轻、高抗辐射能力等优点。因此,随着GaN基宽禁带半导体材料及器件的进一步发展,可助推空间太阳能电站早日实现。Space Solar Power Station requires high efficiency, good environmental adaptability, long life of new photoe- lectric conversion materials and high power semiconductor devices. In this paper, the application and development of wide bandgap semiconductor in solar energy technology are smnmarized. GaN high efficiency solid state amplifier and The gap width ranges fi＇om 0.7e V （ InN ） to 3.4e V （GaN） continuously adjustable InGaN direct belt gap solar cell has the advanta- ges of high reliability, high efficiency, small volume, light weight and high radiation resistance. The further development of GaN base wide bandgap semiconductor materials and devices can boost the early realization of space solar power station.

关 键 词：空间太阳能电站 宽禁带半导体 GAN HEMT INGAN 

分 类 号：V474[航空宇航科学与技术—飞行器设计]