氯掺杂氧化亚铜的制备及光电性能  

Preparation and Photoelectrical Properties of Cl-doped Cu_2O

作　　者：谢思思 千志科 XIE Sisi;QIAN Zhike(Basic Course Teaching Department;College of Mechanical and Electrical Engineering,Huanghe Jiaotong University,Jiaozuo 454150,China)

机构地区：[1]黄河交通学院基础教学部,河南焦作454150 [2]黄河交通学院机电工程学院,河南焦作454150

出　　处：《新乡学院学报》2018年第6期22-25,共4页Journal of Xinxiang University

摘　　要：采用电化学沉积法在弱酸性溶液中制备n型氧化亚铜晶体,以氯化钠为添加剂实现氯掺杂。研究不同Cl-浓度对氧化亚铜表面形貌及晶体结构的影响,结果表明:氯掺杂可促进氧化亚铜晶体(111)面的生长,但浓度过高会导致铜单质的生成。利用自制的表面光电压测试仪研究了在外加电场作用下氯掺杂前后氧化亚铜晶体的光电压(SPS)谱和相位(PS)谱,结果表明:氯掺杂可以提高载流子浓度,克制反型层的产生,加强Cu_2O的n型导电性。Cuprous oxide（Cu2O） crystals were prepared in weakly acidic solution by means of electrochemical deposition method, Cl doping was realized by using Na Cl as additive. The influences of different concentration of Cl^- on the surface morphology and the crystal structure were investigated. Cl doping could make preferential growth in（111） crystal face, but Cu could appear in too high concentration of Cl^-. The surface photovoltage spectrum（SPS） and phase spectrum（PS） before and after Cl doping under the action of applied electric field were studied by self-made surface photovoltage tester. The results of field-induced SPS and PS showed that Cl doping could increase the carrier concentration, restrain the formation of the inversion layer and improve the stability of n-type conductivity.

关 键 词：Cu2O薄膜 Cl掺杂 表面光电压谱 相位谱 反型层 

分 类 号：O475[理学—半导体物理]