质子辐照对Yb掺杂ZnO稀磁半导体薄膜缺陷与磁性的影响  

Influence of Proton Irradiation on Defect and Magnetism of Yb-doped ZnO Dluted Magnetic Semiconductor Thin Films

作　　者：陈卫宾[1,2] 刘学超 卓世异[1] 柴骏[1,2] 施尔畏 CHEN Wei-Bin;LIU Xue-Chao;ZHUO Shi-Yi;CHAI Jun;SHI Er-Wei(Shanghai Institute of Ceramics,Chinese Academy of Sciences,Shanghai 200050,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院上海硅酸盐研究所,上海200050 [2]中国科学院大学,北京100049

出　　处：《无机材料学报》2018年第8期903-908,共6页Journal of Inorganic Materials

基　　金：国家自然科学基金青年基金(51602331);国家重点研发计划项目(2016YFB0400401;2017YFB0405700)~~

摘　　要：采用电感耦合等离子体增强物理气相沉积法制备了Yb掺杂ZnO薄膜,并采用不同剂量质子对薄膜进行了辐照实验,重点采用X射线衍射、光电子能谱、正电子湮灭图谱和磁测量系统对Zn_(0.985)Yb_(0.015)O薄膜的缺陷和磁性能进行了研究。磁性测试结果表明:Zn_(0.985)Yb_(0.015)O薄膜经质子辐照后其饱和磁化强度随辐照剂量的增加逐渐增大,当辐照剂量为6×10^(15) ions/cm^2时,其饱和磁化强度达到最大,随着辐照剂量的进一步增加,其饱和磁化强度反而变小。正电子湮灭图谱结果显示薄膜中主要存在锌空位相关的缺陷,并且锌空位相关的缺陷随辐照剂量的变化与饱和磁化强度随辐照剂量的变化相一致。本研究从实验上揭示了在含有各种缺陷的Yb掺杂ZnO薄膜中,锌空位缺陷是影响质子辐照Zn_(0.985)Yb_(0.015)O薄膜磁性的主要原因。Yb-doped ZnO thin films were prepared by inductively coupled plasma enhanced physical vapor deposition method, the as-deposited Zn（0.985）Yb（0.015）O thin films were irradiated by proton with different doses. X-ray diffraction, X-ray photoelectron spectroscopy, positron annihilation spectroscopy, and magnetic property measurement were used to study the defect and ferromagnetism. The magnetic property measurement results indicate that the saturation magnetization of Zn（0.985）Yb（0.015）O thin films increases with the increment of irradiation doses, and reaches the maximum value at 6×10^（15） ions/cm^2. With the further increase in irradiation doses, the saturation magnetization decreases. The positron annihilation measurement reveals that Zn vacancy-related defects dominate in proton irradiated Zn（0.985）Yb（0.015）O thin films. It is found that dependency of saturation magnetization on irradiation doses exhibits the same behavior with the amount of Zn vacancy-related defects on irradiation doses. It is experimentally demonstrated that the ferromagnetism of proton irradiated Yb-doped ZnO thin films is mainly influenced by Zn vacancy-related defects.

关 键 词：Yb掺杂ZnO 质子辐照 稀磁半导体 铁磁性 

分 类 号：O474[理学—半导体物理]