多晶硅发射极NPN管的辐射效应研究  

Study on Radiation Effect of Polysilicon Emitter NPN Transistors

作　　者：陈光炳[1] 张培健[1] 谭开洲[1] CHEN Guangbing;ZHANG Peijian;TAN Kaizhou(Science and Technology on Analog Integrated Circuit Laboratory,Chongqing 400060,P.R.China)

机构地区：[1]模拟集成电路重点实验室,重庆400060

出　　处：《微电子学》2018年第4期520-523,528,共5页Microelectronics

基　　金：模拟集成电路重点实验室基金资助项目(0C09YJTJ1503)

摘　　要：为了研究多晶硅发射极双极晶体管的辐射可靠性,对多晶硅发射极NPN管进行了不同偏置条件下^(60)Coγ射线的高剂量率辐照试验和室温退火试验。试验结果表明,辐射后,基极电流I_B显著增大,而集电极电流I_C变化不大;反偏偏置条件下,I_B的辐射损伤效应在辐射后更严重;室温退火后,I_B有一定程度的持续损伤。多晶硅发射极NPN管与单晶硅发射极NPN管的辐射对比试验结果表明,多晶硅发射极NPN管的抗辐射性能较好。从器件结构和工艺条件方面,分析了多晶硅发射极NPN管的辐射损伤机理。分析了多晶硅发射极NPN管与单晶硅发射极NPN管的辐射损伤区别。In order to study the radiation reliability of polysilicon emitter bipolar transistors,the high dose rate irradiation test and room temperature annealing test of 60Coγ ray in the polysilicon emitter NPN transistors were performed under different bias conditions.The experimental results showed that the base current IBincreased significantly after radiation,and the collector current IC did not change much.The radiation damage of IB was more serious under the reverse bias condition.After annealing at room temperature,IB had a certain degree of sustained damage.The contrast test results showed that radiation reliability of the polysilicon emitter NPN transistors was better than that of crystalline silicon emitter NPN transistors.The radiation damage mechanism of the polysilicon emitter NPN transistors was analyzed based on device structure and process condition,and the difference of radiation damage between polysilicon and crystalline silicon emitter NPN transistors was analyzed.

关 键 词：多晶硅发射极 NPN管 辐照偏置 60Coγ射线 辐射损伤 

分 类 号：TN322.8[电子电信—物理电子学]