一种单粒子效应加固RS触发器电路设计  

Design of a Single Event Effects Hardened RS Flip-Flops

作　　者：王佳[1] 李萍 郑然[1] 魏晓敏[1] 胡永才 WANG Jia;LI Ping;ZHENG Ran;WEI Xiao-min;HU Yong-cai(College of Computer Science,Northwestern Polytechnical University,Xi＇an 710072,2 University of Strasbourg,Strasbourg 67037,France)

机构地区：[1]西北工业大学计算机学院,陕西西安710072 [2]斯特拉斯堡大学,法国斯特拉斯堡67037

出　　处：《微电子学与计算机》2018年第9期55-58,63,共5页Microelectronics & Computer

基　　金：国家自然科学基金项目(61504108;61504109);中央高校基本科研业务费专项资金(3102017zy028);陕西省自然科学基金项目(2017JM6084)

摘　　要：提出了一种结构新颖的RS触发器电路结构.基于双互锁存储单元结构,实现了单粒子翻转加固.为进一步消除单粒子瞬态的影响,提出的电路采用了一个保护门电路和一个施密特触发器.该电路基于一种0.25μm商用标准CMOS工艺进行了电路设计和版图物理实现.Spectre仿真结果表明提出的RS触发器对一个单粒子事件完全免疫,输出电压波形不受单粒子翻转和单子瞬态脉冲的影响.与三模冗余结构相比,在同等可靠性的情况下,该触发器面积减小27.8%,功耗降低43.1%.A novel RS flip-flop is proposed in order to degrade the influence of single event upset and single event transient.The proposed circuit can resist single event upset with the help of dual interlocked cell.Moreover,a guard gate and a Schmitt trigger are employed to be immune to single event transient.The proposed circuit is implemented in a 0.25μm commercial standard CMOS process.The Spectre simulation results demonstrate that the proposed circuit is immune to the single event upset and single event transient as only one single event happens.Compared with the triple modular redundancy providing same reliability,the die area and power dissipation of the proposed circuit are decreased by 27.8% and 43.1%,respectively.

关 键 词：单粒子效应 单粒子翻转 单粒子瞬态脉冲 辐射加固 触发器 

分 类 号：TN402[电子电信—微电子学与固体电子学]