衬底温度和N_2流量比对SI基GaN薄膜的影响  

Influence of Substrate Temperature and N_2 Flow Rate on Si–based GaN Films

作　　者：张雄 王箫扬 刘斌[1] 张富春[1] 张水利[1] ZHANG Xiong;WANG Xiao-yang;LIU bin;ZANG Fu-chun;ZHANG Shui-li(College of Physics ＆ Electronic Information,Yan＇an University,Shaanxi Yan＇an 716000,China)

机构地区：[1]延安大学物理与电子信息学院,陕西延安716000

出　　处：《当代化工》2018年第9期1867-1870,共4页Contemporary Chemical Industry

基　　金：延安大学2017年科研计划项目(YDQ2017-11);延安大学高水平大学学科建设专项研究基金(NO.2015SXTS02)

摘　　要：为了获得高质量的GaN薄膜,首先用射频磁控溅射的方法在Si基片合成Ga_2O_3薄膜,再通过高温氨化法与NH_3自组装形成GaN薄膜。然后分别用扫描电子显微镜和X-射线衍射仪对薄膜的形貌和结构进行了表征。结果发现GaN薄膜是纤锌矿结构并沿着晶面(002)方向择优生长。GaN薄膜的生长速率随着衬底温度的升高逐渐下降,结晶质量随着衬底温度的升高逐渐变差。同时晶粒表面较为平整;随着N_2流量比的适量增加,薄膜的结晶质量提高,晶体颗粒较为均匀,通过分析薄膜的生长机理,给出了GaN薄膜的最佳工艺条件。In order to obtain high-quality GaN thin films, Ga_2O_3 thin films were synthesized on Si substrates by radio frequency magnetron sputtering, then GaN films were self-assembled with NH_3 by high temperature ammoniation method. And then, the morphology and structure of the film were characterized by scanning electron microscope and X-ray diffractometer respectively. The results showed that GaN thin film was zinite structure and grew along the（002） crystal surface. The growth rate of the GaN film decreased with the increase of the substrate temperature gradually, and the crystal quality of the GaN film gradually decreased with the increase of the substrate temperature. At the same time, the surface of the grain was smoother; With the increase of N_2 flow ratio, the crystal quality of the film was increased and the crystal particles were more uniform. Finally, the growth mechanism of the film was discussed.

关 键 词：磁控溅射 GAN薄膜 衬底温度 N_2流量 表征 

分 类 号：O484[理学—固体物理]