复合栅介质对AlGaN/GaN MISHEMT器件性能的影响  

Effects of Gate Dielectric Stack on the Characteristics of AlGaN/GaN MISHEMTs

作　　者：张佩佩 张辉 张晓东[2] 于国浩[2] 徐宁[2] 宋亮 董志华[1] 张宝顺 Zhang Peipei;Zhang Hui;Zhang Xiaodong;Yu Guohao;Xu Ning;Song Liang;Dong Zhihua;Zhang Baoshun(Institute of Electronics Information,Hangzhou Dianzi University,Hangzhou 310018,China;Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China)

机构地区：[1]杭州电子科技大学电子信息学院,杭州310018 [2]中国科学院苏州纳米技术与纳米仿生研究所,江苏苏州215123

出　　处：《半导体技术》2018年第11期815-822,共8页Semiconductor Technology

基　　金：国家自然科学基金青年基金资助项目(61306100);江苏省重点研发计划资助项目(BE2016084);中国科学院纳米器件与应用重点实验室青年支持项目(2017QZ01)

摘　　要：由于LPCVD-Si3N4具有良好的介电特性,常用作AlGaN/GaN高电子迁移率场效应晶体管（HEMT）的栅介质,然而在高温生长中,易造成GaN界面Ga和N的扩散。针对此问题,提出了一种采用SiON/Si3N4复合绝缘材料作为HEMT器件栅介质的方法,制备了高质量的AlGaN/GaN金属-绝缘层-半导体高电子迁移率晶体管（MISHEMT）器件,并进行了直流测试。测试结果表明,在栅压为18 V时,器件的阈值回滞仅为150 mV,其特征导通电阻为1. 74 mΩ·cm^2（Vgs=2 V）,其击穿电压达到805 V （Ids=100μA/mm）。多频率C-V测试显示,界面态密度可低至2. 9×10^13eV^-1·cm^-2。因此,这种采用SiON/Si3N4复合绝缘材料作为栅介质的方法,在改善器件的阈值回滞、击穿电压和界面态密度等方面效果显著。Due to the excellent dielectric property,LPCVD-Si3N4 material is commonly used as gate dielectric of AlGaN/GaN high electron mobility transistor（ HEMT）. However,it is easy to cause the diffusion of Ga and N on GaN interface in high-temperature growth ambient. A method of using Si ON/Si3N4 composite insulating material as gate dielectric of HEMT devices was proposed to solve these problems.The high quality AlGaN/GaN metal-insulator-semiconductor HEMT（ MISHEMT） was fabricated. And the DC test was carried out. The test results show that when the gate voltage is up to 18 V,the threshold hysteresis of the device is 150 m V,the specific on-resistance is 1. 74 mΩ·cm^2（ Vgs= 2 V） and the high breakdown voltage reaches 805 V（ Ids= 100 μA/mm）. The multi-frequency C-V test exhibits the interface-state density is as low as 2. 9 × 10^13 eV^-1·cm^-2. Thus,it is significantly effective to improve the threshold hysteresis,increase the breakdown voltage,and reduce the interface state density by usingSiON/Si_3N_4 composite insulating material as gate dielectric.

关 键 词：ALGAN/GAN 复合栅介质 金属-绝缘层-半导体-高电子迁移率晶体管(MI-SHEMT) 阈值电压 界面态 

分 类 号：TN386[电子电信—物理电子学]