a-Si:H薄膜的表面光电压谱和光电化学特性研究  

Surface Photovoltaic Spectrometry and Photoelectrochemical Properties of Hydrogenated Amorphous Silicon Films

作　　者：崔毅[1] 王宝辉[2] 张力[1] 

机构地区：[1]内蒙古民族大学化学系,内蒙古通辽市028043 [2]大庆石油学院化学化工学院,黑龙江省安达市151400

出　　处：《光谱实验室》2002年第5期620-622,共3页Chinese Journal of Spectroscopy Laboratory

基　　金：内蒙古民族大学科研项目

摘　　要：采用表面光电压谱和光电化学方法 ,对不同掺杂类型的氢化非晶硅 (a- Si:H)薄膜的光伏响应和光电化学特性进行了研究 ,测定了 a- Si:H薄膜的能带结构 ,为 a-Photovoltaic and photoelectrochemical properties of hydrogenated amorphous silicon(a Si:H) films were investigated by surface photovoltaic spectrometry and PEC method.The results show that the photovoltage spectra(SPS) of three type a Si:H films are difference,which highly depend on the doping conditions.Based on the spectra,the valence band and conduction band of intrinsic a Si:H film were calculated.

关 键 词：A-SI:H薄膜 氢化非晶硅 表面光电压谱 光电化学 半导体材料 

分 类 号：TN304.12[电子电信—物理电子学] O48[理学—固体物理]