不同能量氮氧共注入形成的多层SOI结构  

SOI with stacked buried layers formed by sequential nitrogen and oxygen ion implantation with multiple energy

作　　者：刘相华[1] 陈猛[1] 刘忠立[2] 王曦[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所离子束开放研究实验室,上海200050 [2]中国科学院半导体研究所,北京100083

出　　处：《功能材料与器件学报》2002年第3期228-232,共5页Journal of Functional Materials and Devices

基　　金：国家自然科学基金委员会国家杰出青年基金的资助(No.59925205)

摘　　要：将氮和氧离子在不同能量下依次注入于硅片,并经1200oC,2h高温退火后,形成具有含有中间硅层的夹心埋层SOI结构。对该样品做俄歇电子能谱(AES)、剖面透射电镜(XTEM)、二次离子质谱(SIMS)和击穿场强等测试,表明退火后形成具有Si-N-O、Si和Si2O夹心埋层的SOI结构。其击穿场强最大为5×106V/cm,与普通剂量SIMOX的相当。测试还发现氮在界面处有明显的富集效应,而且其在前界面的富集行为明显大于其在后界面的。Silicon wafers were implanted by ni trogen and oxygen ion with multiple e nergy.The samples were then annealed at 1200℃for 2h.SO I samples were characterized by mean s of XTEM,SIMS,AES and breakdown measurement.The resu lts show that the buried layers are composed of Si -N -O,Si and Si 2 O layers.The maximal breakdown of electric field is 5×10 6 V /cm which is equal to result of normal SIMOX.It is also found that th ere is a tendence of nitrogen to be tra pped at both the upper and lower interfaces,and the tendence f or nitrogen to be trapped at the upper interface is more evident.

关 键 词：SOI 离子注入 硅 结构 

分 类 号：TN304.12[电子电信—物理电子学]