类金刚石薄膜作为阴极阵列的场发射显示器研制  

Fabrication of field emission display using diamond-like-carbon thin film as cathode array

作　　者：冯涛[1] 茅东升[1] 李炜[1] 柳襄怀[1] 王曦[1] 张福民[1] 李琼[2] 徐静芳[2] 诸玉坤[2] 

机构地区：[1]中国科学院上海微系统与信息技术研究所离子束开放研究实验室,上海200050 [2]华东师范大学电子科学与技术系,上海200062

出　　处：《功能材料与器件学报》2002年第3期293-296,共4页Journal of Functional Materials and Devices

基　　金：国家自然科学基金资助(No.59972039);国家973资助(No.G2000067207-2)

摘　　要：采用真空磁过滤弧沉积(FAD)的方法制备的类金刚石(DLC)薄膜具有良好的场发射性能。通过离子束技术和微细加工技术可以实现DLC薄膜的图形化并能大大提高薄膜的场发射性能。测试表明,DLC薄膜孔洞阵列具有很好的电子场发射性能,阈值电场达到了2.1V/μm,当场强为14.3V/μm时,电流密度达到了1.23mA/cm2。利用图形化的DLC薄膜作为阴极,设计和制作了矩阵选址单色场发射显示器(FED)样管。Diamond -like -carbon(DLC)thin film was prepared by filtered arc deposition(FAD)with a good electron emission performance.A patterned DLC thin film cath ode was fabricated by reactive -ion etching method and mic ro -fabrication technology.The ele ctron emission performance of the patterned DLC thin film cathod e is much better than the unpatterned ones.Field emission from DLC hole array was studied.Threshold field is as low as 2.1V /μm.At an electric field of 14.3V /μm,an emission current density as large as 1.23mA /cm 2 is achieved.On the base of fabricati on of the patterned DLC thin film cathode,a ki nd of matrix -addressed diode FED pro totype is designed and packaged.

关 键 词：类金刚石薄膜 阴极阵列 场发射显示器 

分 类 号：TN873.95[电子电信—信息与通信工程]