窄条宽化学气相沉积选区生长InP系材料波长调制的研究  

Wavelength Modulation of InP- based Materials by Use of Narrow-stripe Selective Metallorganic Chemistry Vapour Epitaxy

作　　者：张瑞英[1] 董杰[1] 周帆[1] 李国华 边静[1] 冯志伟[3] 王圩[1] 

机构地区：[1]中国科学院半导体研究所国家光电子工艺中心 [2]超晶格国家重点实验室,北京100083 [3]长春光机学院,吉林长春130022

出　　处：《中国激光》2002年第9期832-836,共5页Chinese Journal of Lasers

基　　金：国家973项目(编号:G20000683-1);国家自然科学基金(编号:69896260)资助项目

摘　　要：采用窄条宽选区生长化学气相沉积(NSAG-MOCVD)技术在掩膜宽度0～40μm范围内,获得波长漂移达177.5nm的高质量的InGaAsP材料,经推导,获得各个生长区域的组份、应变和In,Ga的气相浓度增加因子的比值随掩膜条宽的变化关系,并且认为该比值在阈值掩膜宽度范围内,与Ⅲ族分压比相关,大于阈值掩膜宽度范围内,与Ⅲ族源无关。此外,对材料富In现象作了合理解释。The high quality InGaAsP materials, which wavelength shift is more than 177.5 nm with a small mask with of 0-40 μm, have been obtained by use of NSAG-MOCVD in the low growth pressure of 130 mbar. The composition variation, strain and the enhancement ratios of the vapor phase concentrations for TMIn and TMGa on the epilayer surface at the center of the mask opening to that in the maskless region with the mask width have been deduced, respectively. It is discovered that the ratio variation with the mask width is dependent on the concentration of TMIn and TMGa in the vapour phase when the mask width is less than the threshold mask width, and independent on that when the mask width is more than the threshold mask width. Moreover, the phenomena of In rich with the mask width increase has been explained rationally.

关 键 词：窄条宽选区生长 化学气相沉积 INGAASP 波长调制 NSAG-MOCVD 

分 类 号：TN304.055[电子电信—物理电子学]