Simulation of a Novel Schottky Body-Contacted Structure Suppressing Floating Body Effect in Partially-Depleted SOI nMOSFET's  

一种能够抑制部分耗尽SOI nMOSFET浮体效应的新型Schottkty体接触结构的模拟(英文)

作　　者：刘运龙[1] 刘新宇[1] 韩郑生[1] 海潮和[1] 钱鹤[1] 

机构地区：[1]中国科学院微电子中心,北京100029

出　　处：《Journal of Semiconductors》2002年第10期1019-1023,共5页半导体学报（英文版）

摘　　要：A novel Schottky body-contacted structure for partially depleted SOI nMOSFET's is presented.This structure can be realized by forming a shallow n +-p junction and two sidewall spacers in the source region,and then growing a thick silicide film,which can punch through the shallow junction and make a Schottky contact to the p-type silicon.Simulation results show that the anomalous subthreshold slope and kink effects are suppressed successfully and the drain breakdown voltage is improved considerably.This method has the same device area and is completely compatible with the bulk MOSFET process.提出了一种新型的Schottky体接触结构 ,能够有效抑制部分耗尽SOInMOSFET的浮体效应 .这种结构可以通过在源区形成一个浅的n+ p结和二次侧墙 ,然后生长厚的硅化物以穿透这个浅结的方法来实现 .模拟结果表明这种结构能够成功抑制SOInMOSFET中存在的反常亚阈值斜率和kink效应 ,漏端击穿电压也有显著提高 .这种抑制浮体效应的方法不增加器件面积 ,而且与体硅MOSFET工艺完全兼容 .

关 键 词：SOI NMOSFET floating body effect body contact 

分 类 号：TN386[电子电信—物理电子学]