AlGaN/GaN界面特性研究进展  

Progress of AlGaN/GaN interface characteristics research

作　　者：郝跃[1] 张金凤[1] 

机构地区：[1]西安电子科技大学微电子所,陕西西安710071

出　　处：《微纳电子技术》2002年第10期1-7,共7页Micronanoelectronic Technology

基　　金：国防科技预先研究项目支持项目(41308060106)

摘　　要：GaN是一种宽禁带半导体材料,由于具有优越的热稳定性和化学稳定性,使这种材料和与其相关的器件可以工作在高温和恶劣的环境中,并可用于大功率微波器件。本文主要介绍AlGaN/GaN有关界面特性,该特性反映了纵向纳米尺度下的能带特性;从AlGaN/GaNHEMT设计出发,给出了材料性质和结构参数对AlGaN/GaN异质结二维电子气特性影响的研究结果;讨论了AlGaN/GaN界面2DEG载流子的输运性质;分析了材料缺陷对AlGaN/GaN界面2DEG性质的影响;指出了有待研究的问题和方向。GaN is a kind of wide-band-gap semiconductor material.The outstanding thermal and chemical stability of GaN enable it and its devices to operate at high temperatures and in hostile environments,also makes it attractive to high microwave power application.In this paper,AlGaN/GaN material and its relative interface characteristics are presented;AlGaN/GaN interface char-acteristics will reflect sufficiently some nano-structure and energy-band effects.To optimize AlGaN/GaN HEMT design,current research results of influence of AlGaN/GaN material properties and structure parameters on characteristics of2DEG at AlGaN/GaN interface are reviewed;The trans-port features of2DEG carriers at AlGaN/GaN interface are discussed and the effects of material defects on2DEG are analyzed;At last,some problems remaining open are also pointed out.

关 键 词：ALGAN/GAN异质结 二维电子气 表面特性 氮化镓 铝镓氮三元化合物 

分 类 号：TN304.2[电子电信—物理电子学]