超大规模集成电路金属互连线的电迁移过程指示参量研究  

Investigation of Indicator Parameters of Electromigration in Very Large Scale Intergration Interconnects

作　　者：杜磊[1] 薛丽君[2] 庄奕琪[2] 徐卓[1] 

机构地区：[1]西安交通大学电子陶瓷与器件教育部重点实验室,西安710049 [2]西安电子科技大学技术物理学院

出　　处：《西安交通大学学报》2002年第10期1062-1065,共4页Journal of Xi'an Jiaotong University

基　　金：教育部重点实验室访问学者基金资助项目

摘　　要：通过实验研究分阶段全面描述金属互连电迁移过程的参量集合 ,发现了电阻和金属薄膜电阻的低频涨落在金属互连电迁移演化过程中的变化规律 .实验结果表明 ,将电阻与金属薄膜电阻的低频涨落点功率谱幅值及频率指数 3个指示参数相结合 ,可以明确指示和区分电迁移过程中材料的空位扩散、空洞成核和空洞长大 3个微观结构变化的阶段 .上述 3个参量作为一个集合才能够全面表征金属薄膜电迁移退化的过程 ,在此基础上可望发展新的超大规模集成电路 (VLSI)A new set of multiparameter that can characterize the electromigration process by stages in metal internconnects is established. The evolution rule of resistance and low frequency fluctuations (1/ f noise) of metal interconnects in electromigration process experiments are presented. It is demonstrated that the resistance change,power spectrum and frequency exponent of 1/ f noise can be used as unitized indicator parameters of the degradation process induced by electromigration. These parameters can clearly indicate three stages of the degradation process which are vacancy diffusion,void nucleation, and void growth. The degradation process by electomigration in metal film can be perfectly described by taking three parameters as a set. Based on the advantages of the way mentioned above, a new estimate technology in very large scale integration(VLSI) interconnect reliability is expected to be developed.

关 键 词：超大规模集成电路 金属互连线 指示参量 噪声点功率谱幅值 电迁移 低频涨落 频率指数 

分 类 号：TN470.597[电子电信—微电子学与固体电子学]