HEMT中二维电子气的电子密度的研究  

Research on the Density of 2DEG in HEMT

作　　者：徐敏[1] 

机构地区：[1]陕西安康师范专科学校物理系,陕西安康725000

出　　处：《江西师范大学学报（自然科学版）》2002年第3期266-269,共4页Journal of Jiangxi Normal University(Natural Science Edition)

摘　　要：考虑到界面态影响 ,通过求解泊松方程 ,推导出了HEMT中二维电子气的电子密度表达式 。Taking the influence of interface state into account and by solving the possion equation,the authors deduce a new expression for the density of 2DEG in HEMT,and put forword amendments for the expression of the density of 2DEG in HEMT in which the influence of interface state was not considered.

关 键 词：HEMT 高电子迁移率晶体管 二维电子气 界面态 电子密度 泊松方程 肖特基势垒 

分 类 号：TN386.6[电子电信—物理电子学]