LP-MOCVD生长InGaN及InGaN/GaN量子阱的研究  

The Characterization of InGaN and InGaN/GaN Quantum Wells Grown by LP-MOCVD

作　　者：刘宝林[1] 陈松岩[1] 吴正云[1] 陈朝[1] 陈丽蓉[1] 黄美纯[1] 

机构地区：[1]厦门大学物理系,福建厦门361005

出　　处：《光电子．激光》2002年第10期997-1000,共4页Journal of Optoelectronics·Laser

基　　金：福建省自然科学基金资助项目 (E982 0 0 0 1) ;国家教育部高等学校骨干教师资助计划项目资助

摘　　要：利用 MOCVD系统在 Al2 O3衬底上生长 In Ga N材料和 In Ga N/ Ga N量子阱结构材料。研究发现 ,In Ga N材料中 In组份几乎不受 TMG与 TMI的流量比的影响 ,而只与生长温度有关 ,生长温度由 80 0℃降低到 74 0℃ ,In组份的从 0 .2 2增加到 0 .4 5 ;室温 In Ga N光致发光光谱 (PL)峰全半高宽 (FWH M)为 15 .5 nm;In Ga N/ Ga N量子阱区 In Ga N的厚度 2 nm,但光荧光的强度与 10 0 nm厚 In Ga N的体材料相当。InGaN bulk material and InGaN/GaN quantum well were grown by low pressure metal organic chemical vapor deposition(LP MOCVD),and they were characterized by X ray and photo luminescence(PL) maximum at room temperature.The PL full width of half of InGaN grown at 800 ℃ is 15.5 nm at room temperature and the peak wavelength is 437 nm.The In composition in InGaN did not dependent on the ratio of TMG and TMI but on the growth temperature and the In content increases from 0.22 at 800 ℃ to 0.45 at 740 ℃.The In composition and thickness of InGaN/GaN quantum well can be determined by the composition and growth rate of bulk material.

关 键 词：LP-MOCVD INGAN INGAN/GAN 量子阱 Ⅲ-V基化合物 铟镓氮三元化合物 

分 类 号：TN304.26[电子电信—物理电子学]