MESFET肖特基势垒结参数提取及I-V曲线拟合  

Parameter Extraction and I-V Curve Simulation of the MESFET's Schottky Junction

作　　者：黄云[1] 费庆宇[1] 

机构地区：[1]中国电子产品可靠性与环境试验研究所,广州510610

出　　处：《固体电子学研究与进展》2002年第3期329-332,343,共5页Research & Progress of SSE

摘　　要：运用双指数函数模型方法分析了影响 MESFET的 Ti Pt Au-Ga As肖特基势垒结特性的各种因素及各因素间的关系 ,编制了 MESFET肖特基势垒结结参数提取和 I-V曲线拟合软件 ,实现了通过栅源正向 I-V实验数据提取反映肖特基势垒结特性的六个结参数和得到相应结参数下的理论数据 ,与实验数据吻合良好。分析了影响肖特基势垒结 I-V曲线分布的因素 ,提出了进行器件特性、参数稳定性与可靠性研究和定量分析Parameters and characteristics of TiPtAu GaAs Schottky junction of MESFETs were analyzed by a two exponential analytical method, and parameter extraction and I V curve simulation of this junction were finished. Six junction parameters were extracted by numerical fit of an experimental I V curve. Satisfactory results of fitting of I V curves have been obtained. We analyzed the factors of affecting I V curve figure and described a new method of studying MESFET's Schottky junction.

关 键 词：MESFET 金属肖特基势垒场效应晶体管 参数提取 曲线拟合 寄生电阻 

分 类 号：TN386.3[电子电信—物理电子学]