DC—12GHz GaAs微波单片集成开关  

DC-12GHz GaAs MMIC Switch

作　　者：陈继义[1] 莫火石[1] 陈克金[1] 

机构地区：[1]南京电子器件研究所,210016

出　　处：《固体电子学研究与进展》1991年第1期2-7,共6页Research & Progress of SSE

摘　　要：本文介绍了全气密陶瓷封装GaAs MMIC开关的设计方法和制造工艺.研制成的GaAsMMIC单刀单掷开关在DC-12GHz频带内,插入损耗为0.3—1.4dB,隔离度为19—27dB,反射损耗大于11dB,开关速度小于1ns,8GHz下功率处理能力大于25dBm.The paper describes a design method and fabrication technology of GaAs MMIC switch in airtight ceramic package. The developed GaAs MMIC SPST switch has an insertion loss of 0.3-1.4dB over DC-12GHz frequency band with a return loss of better than 11dB. An isolation increases with frequency from 19dB at DC to 27dB at 12GHz. The SPST switch demonstrates a switching time less than 1ns and a power-handling capability of batter than 25dBm at 8GHz.

关 键 词：GAAS 微波集成开关 陶瓷封装 开关 

分 类 号：TM564[电气工程—电器]