用于脉冲功率领域的碳化硅四层器件性能概述  

Four Layer SiC Devices Applied in Pulsed Power Area

作　　者：梁琳[1] 潘铭[1] 舒玉雄 张鲁丹 LIANG Lin;PAN Ming;SHU Yu-xiong;ZHANG Lu-dan(School of Optical and Electronic Information, Huazhong University of Science & Technology, Wuhan 430074,China)

机构地区：[1]华中科技大学光学与电子信息学院,武汉430074

出　　处：《现代应用物理》2016年第2期48-54,共7页Modern Applied Physics

基　　金：国家自然科学基金资助项目(51377069);中国工程物理研究院脉冲功率科学与技术重点实验室基金项目(PPLF2013PZ02);中国国家留学资金委资助项目(201308420123)

摘　　要：综合论述了基于碳化硅(SiC)材料制备的四层器件在脉冲功率领域的应用现状或前景。调研了SiC超级门极可关断晶闸管(super gate turn-off thyristor,SGTO)的研究进展,总结了近年来获得的实验结果。实验研究了SiC发射极可关断晶闸管(emitter turn-off thyristor,ETO)的开通过程。结果表明,开通dI/dt可以在一定条件下受控,以适应脉冲功率或电力电子变换的不同需求,实验获得最大功率密度为329kW·cm^(-2)。建立了SiC反向开关晶体管(reversely switched dynistor,RSD)二维数值模型,论证了开通原理的可行性,热电耦合模型以SiC本征温度为依据据,SiC RSD的功率密度达MW·cm^(-2)量级。The highvoltage andhigh current characteristics for the power devices with the four layer thyristor type structure make them favorable in the high power It is reviewed in this paper tha^t 1^he present or future application situation for the four layer devices based on the silicon carbidematerial in the pulsed power area. The research progress for the SiC SGTO(super gate turn-off thyristor) is surveyed and the experimental results acquired in recent years are summarized. The turn-on process for the Si^C ETO(emitter turnoff thyristor) is studied by experiment, which shows that the turn-on dl/dt could be controlled under certain condition, so as to satisfy the different r^equirement for pulse power or power electronic conversion. The maximum power density obtained in the experiment s329 kW ? cm-2. The two-dimensional numerical model for the S C R SD ( reversely switched dynistor) s established and the turn-on principle s verified. Taking the intrinsic temperature of SiC as basis, the thermal-electric coupling model shows that t s peak power density could reach the order of MW ? cm-2 .

关 键 词：SIC SGTO SIC ETO SIC RSD 碳化硅 脉冲功率 

分 类 号：TN313[电子电信—物理电子学]