平板式外延炉大尺寸硅外延层的均匀性调控  

Uniformity adjust and control of large-area Si epitaxial layer based on planar epitaxial furnace

作　　者：李明达[1] 陈涛[1] 李普生[1] 薛兵[1] LI Mingda;CHEN Tao;LI Pusheng;XUE Bing(The 46th Research Institute of China Electronics Technology Group Corporation, Tianjin 300220, China)

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《电子元件与材料》2017年第3期38-41,共4页Electronic Components And Materials

摘　　要：硅外延层是在硅单晶抛光衬底上采用化学气相沉积方法生长的一层单晶硅薄膜。本实验以150 mm的大尺寸硅抛光片为衬底生长高均匀性外延层,结合傅里叶变换红外线光谱分析(FT-IR)、电阻率测试仪等测试设备对外延层电学参数进行了分析。对平板式外延炉的流场、热场与厚度、电阻率均匀性的相互作用规律进行了研究,最终制备出表面质量良好、片内和片间不均匀性小于1%的外延层。Silicon epitaxial layer is a kind of mono crystalline silicon thin film,which deposites on the surface of the polished silicon substrate by using chemical vapor deposition method.In this study,using150mm large size silicon polished wafer as the substrate,with epitaxial layer high uniformity was deposited.Combining with epitaxial electrical parameters by using Fourier transform infrared spectroscopy(FT-IR)and resistivity testing apparatus,the relationship between flowing field,thermal field of the planar epitaxial furnance and uniformity of thickness,resistivity was studied.Finally,the epitaxial layer with good surface quality and non-uniformity less than1%was prepared successfully.

关 键 词：硅外延层 化学气相沉积 厚度 电阻率 均匀性 缺陷 

分 类 号：TN304[电子电信—物理电子学]