高性能场终止寿命控制FRD芯片工艺研究  

Fabrication of High Performance Field-stop and Carrier-Lifetime-Control Fast Recovery Diodes

作　　者：刘建华 郎金荣 周卫平 LIU Jianhua;LANG Jinrong;ZHOU Weiping(Advanced Semiconductor Manufacturing Co., Ltd, Shanghai 200233, China)

机构地区：[1]上海先进半导体制造股份有限公司,上海200233

出　　处：《集成电路应用》2017年第8期45-50,共6页Application of IC

基　　金：上海市科学技术委员会科技创新行动计划高新技术基金(17DZ1100300)

摘　　要：快恢复二极管(Fast recovery diode,FRD)是重要的功率器件,广泛应用于智能电网、新能源汽车、光伏和轨道牵引等重要场合,具有重要的战略意义和市场价值。为了突破FRD的关键技术瓶颈,本项目研究了高性能场终止寿命控制1 200 V等系列FRD芯片工艺技术。采用H+注入辐照局域寿命控制技术与电子辐照全局寿命控制技术,兼顾了提高软度因子和降低反向恢复时间两方面的关键性能要求。采用扩散片衬底引入场终止层结构极大地改善了快恢复二极管的软度因子,改善了正向导通压降V f,提高了器件的高温耐压特性。测试结果表明,研制的1 200 V FRD器件正向导通电压为1.6~2.0 V,反向击穿电压为1 270~1 380 V,反向恢复时间为100~200 ns,与国际同类高性能FRD器件性能相当。快速高可靠性FRD的成功研制,对我国突破高性能FRD在高端领域的制造工艺技术具有重要的意义。Fast recovery diode(Fast recovery diode,FRD)is an important power device,which widely used in smart grid,new energy vehicles,photovoltaic and rail traction and other important occasions.It has important strategic significance and market value.In order to break through the key technical bottleneck of FRD,this project studies the high performance field and termination life control,1200V and other series FRD chip process technology.Both local carrier lifetime control through H+ion implantation and global carrier lifetime carrier control through electron irradiation are adopted to balance the key requirements of bigger soft recovery factor and short reverse recovery time.Field-stop layer is inserted by using diffusion wafers to increase the soft recovery factor and the high temperature breakdown voltage as well.The tested forward voltage drop is about1.6～2.0V.The reverse breakdown voltage is about1270～1380V.And the reverse recovery time is about100～200ns,close to the properties of the best commercial FRDs.The success of high performance and highly reliable FRDs would highly support the accelerating developing of the high-end FRDs applications in China.

关 键 词：功率器件 快恢复二极管 载流子寿命控制 场终止 软度因子 半绝缘多晶硅 

分 类 号：TN322.8[电子电信—物理电子学]