高质量InSb薄膜的MBE同质和异质外延生长  

MBE homogeneity and hetero-epitaxial growth of high quality InSb thin films

作　　者：尚林涛[1] 周翠[1] 沈宝玉[1] 周朋[1] 刘铭[1] 强宇[1] 王彬 SHANG Lin-tao;ZHOU Cui;SHEN BAO-yu;ZHOU Peng;LIU Ming;QIANG Yu;WANG Bin(North China Research Institute of Electro-Optics,Beijing 100015 , China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《激光与红外》2018年第3期352-357,共6页Laser & Infrared

摘　　要：InSb是3~5μm中波红外波段具有重要研究意义的材料。本文以单位内部生产的InSb(100)衬底为基础,通过摸索InSb(100)衬底的脱氧、生长温度和Ⅴ/Ⅲ束流比,获得了高质量的InSb同质外延样品,1.5μm样品的表面粗糙度RMS≈0.3 nm(10μm×10μm),FWHM≈7 arcsec;采用相同的生长温度和Ⅴ/Ⅲ束流比并采用原子层外延缓冲层的方法在GaAs(100)衬底上异质外延生长本征InSb层,获得了较高质量的异质外延InSb样品,1.5μm样品的室温电子迁移率高达6.06×10~4cm^2V^(-1)s^(-1),3μm的样品最好的FWHM低至126 arcsec。InSb材料的同质和异质外延优化生长可为高温工作掺Al的InSb器件结构的优化生长提供重要参考依据。InSb has important research significance for3~5|jim mid-wave infrared band.Based on InSb(100)substrate,the high quality InSb homo-epitaxial samples were obtained by optimizing some parameters,such as substrate preprocess,growth temperature and V/III beam ratio,etc.The surface roughness of the sample is about0.3nm(10μm x10μm),FWHM is about7arcsec.Under the same growth temperature and V/III beam ratio,InSb intrinsic layer on the GaAs(100)substrate was grown by atomic layer epitaxial buffer layer method,and a high quality heteroepitaxial InSb sample was obtained.Electron mobility of1.5jjim sample reaches up to6.06x104cm2V-1s-1at room temperature,and the best FWHM of3jjim sample is as low as126arcsec.The optimized growth of homogeneous and hetero-epitaxial InSb materials can provide an important reference for the optimized growth of InSb devices at high working temperature.

关 键 词：INSB InSb/GaAS 分子束外延 同质外延 异质外延 

分 类 号：TN213[电子电信—物理电子学]