粗糙GaAs(001)表面对In_(0.15)Ga_(0.85)As薄膜生长的影响  

Effect of Rough GaAs (001) Surface on the Growth of In_(0.15)Ga_(0.85)As Film

作　　者：杨晓珊 郭祥 罗子江[2] 王一 杨晨 许筱晓 张之桓 丁召 YANG Xiaoshan;GUO Xiang;LUO Zijiang;WANG Yi;YANG Chen;XU Xiaoxiao;ZHANG Zhihuan;DING Zhao(School of Big Data and Information Engineering,Guizhou University,Guiyang 550025,China;School of Information,Guizhou University of Finance and Economics,Guiyang 550004,China)

机构地区：[1]贵州大学大数据与信息工程学院,贵州贵阳550025 [2]贵州财经大学信息学院,贵州贵阳550004

出　　处：《电子科技》2018年第4期1-4,共4页Electronic Science and Technology

基　　金：国家自然科学基金(61564002;11664005;61604046);贵州省科学技术基金(黔科合J字[2014]2046;黔科合LH字[2016]7436;黔科合基础[2017]1055)

摘　　要：通过改变衬底降温速率的方法利用分子束外延(MBE)和扫描隧道显微镜(STM)联合系统制备了不同形貌的Ga As(001)表面。采用SPIP软件测量统计和Bauer定则理论分析,研究了粗糙Ga As(001)表面对In_(0.15)Ga_(0.85)As薄膜生长的影响。结果表明粗糙Ga As(001)表面存在大量的岛和坑,表面能增加,易于In_(0.15)Ga_(0.85)As薄膜层状生长形成平整表面。经计算,面积为100×100 nm^2的粗糙Ga As(001)表面相对平坦Ga As(001)表面,其表面能增加了4.6×10~3e V,大于生长厚度为15 ML的In_(0.15)Ga_(0.85)As薄膜应变能(2.3×10~3e V),说明In_(0.15)Ga_(0.85)As薄膜在粗糙Ga As(001)表面的外延生长模式为层状生长。Different morphology of GaAs(001)surfaces were prepared by reducing the substrates temperature with different contant speed in molecular beam epitaxy(MBE)and scanning tunneling microscope(STM)system,the Effect of rough GaAs(001)surface on the growth of In 0.15 Ga 0.85 As film was studied and analyzed through scanning probe image processor(SPIP)and Bauer rule,the results show that surface energy was increasing because of numberous islands and pits on the rough GaAs surface,thus the In 0.15 Ga 0.85 As was apt to form a flat surface by layer growth.compared with the flat GaAs(001)surface with 100×100 nm 2,surface energy of the rough GaAs(001)increased by 4.6×10 3 eV per,which is larger than the strain energy of 15 ML In 0.15 Ga 0.85 As film(2.3×10 3eV),it is shown that the epitaxial growth mode of In 0.15 Ga 0.85 As film on the surface of rough GaAs(001)is layer-by-layer.[

关 键 词：MBE STM GAAS 粗糙表面 In0.15 Ga0.85As薄膜 表面能 

分 类 号：TN3[电子电信—物理电子学] O47[理学—半导体物理]