非晶硅薄膜晶化方法  

The Crystallization Methods of Amorphous Silicon Thin Film

作　　者：陶泉丽 陈诺夫[1] 马大燕[1] 王从杰[1] 白一鸣[1] TAO Quanli;CHEN Nuofu;MA Dayan;WANG Congjie;BAI Yiming(School of Renewable Energy,North China Electric Power University,Beijing 102206)

机构地区：[1]华北电力大学可再生能源学院,北京102206

出　　处：《材料导报》2017年第A02期84-87,共4页Materials Reports

基　　金：北京市自然科学基金(2151004);中央高校基本科研业务费专项资助基金(2016MS50)

摘　　要：多晶硅薄膜由于具有较高的载流子迁移率和良好的光电性能,广泛应用于集成电路及光电器件中,尤其在太阳电池领域引起了广泛关注。多晶材料晶界处会发生载流子的复合,降低载流子寿命。结晶度与晶粒尺寸是多晶硅薄膜取得良好性能的关键因素,直接制备的多晶硅薄膜一般晶粒尺寸较小、晶界较多,所以常采用非晶硅晶化法制备出晶粒尺寸较大的多晶硅薄膜。介绍了几种常见的非晶硅薄膜晶化方法,总结了各种晶化方法的机理和制备的薄膜的物理性质。Polycrystalline silicon thin film has attracted much attention due to its high carrier mobility and photoelectric pro-perties,and it is widely used in integrated circuits and optoelectronic devices,especially in the field of solar cells.The recombination of carriers occurs at the grain boundary of polycrystalline silicon,which reduces the carrier lifetime.Crystallinity and grain size are the key factors in the preparation of polysilicon film.Polycrystalline silicon thin film is usually prepared by amorphous silicon crystallization methods instead of direct deposition for the larger grain size and less grain boundary.Several crystallization methods are introduced including the mechanism and film property of different methods.

关 键 词：多晶硅 热退火 金属诱导晶化 激光晶化 

分 类 号：O783[理学—晶体学]