长波碲镉汞材料表面的氢化处理研究  

Study on the Hydrogenation Treatment of Long Wavelength HgCdTe Material Surface

作　　者：林占文 韩福忠[1] 耿松[1] 李雄军[1] 史琪[1] 王海澎 王向前[1] 蒋俊[1] LIN Zhanwen;HAN Fuzhong;GENG Song;LI Xiongjun;SHI Qi;WANG Haipeng;WANG Xiangqian;JIANG Jun(Kunming Institute of Physics,Kunming 650223,China)

机构地区：[1]昆明物理研究所,云南昆明650223

出　　处：《红外技术》2018年第7期668-672,711,共6页Infrared Technology

摘　　要：本文基于ICP方法对长波HgCdTe材料表面进行了氢化处理,首次在同一焦平面器件上实现了氢化工艺效果的对比。利用原子力显微镜(AFM)、低温探针台系统和焦平面测试系统对HgCdTe材料表面微观形貌及相关器件的电学特性进行了表征分析,结果表明:对长波HgCdTe材料表面进行氢化处理能有效降低MIS器件的界面态、改善二极管器件性能,同时能够增大焦平面器件的信号响应度、减小盲元率。该研究对改善长波HgCdTe/钝化层的界面态以及提高长波HgCdTe器件性能提供了依据。For the first time,a comparison,on the same focal plane device,of the hydrogenation effect of inductively coupled plasma surface(ICP)hydrogenated long-wavelength-HgCdTe has been carried out.The microstructure of the HgCdTe surface and the electrical characteristics of its related devices were determined by AFM,low-temperature-probe,and focal-plane-test systems.The results show that the ICP hydrogenation of the long-wavelength-HgCdTe surface can reduce the interface state of the metal-insulator-semiconductor(MIS)devices,improve the performance of the diodes,increase the signal-response degree,and reduce the blind pixel rate of focal plane devices.This study provides a basis for improving the interface state and passivation layer of long-wavelength HgCdTe,thus enhancing the device performance.

关 键 词：长波碲镉汞 氢化处理 AFM 界面电学特性 I-V 焦平面器件测试 

分 类 号：TN215[电子电信—物理电子学]