台面型InP/InGaAs雪崩光电二极管刻蚀工艺研究  

Study of Etching for Mesa-isolated InP/InGaAs Avalanche Photo Diode

作　　者：夏伟 邓军[1] 牟桐 杜玉杰 Xia Wei;Deng Jun;Mou Tong;Du Yujie(Laboratory of Beijing Photoelectron Technology,Beijing University of Technology,Beijing 100124,China)

机构地区：[1]北京工业大学北京市光电子技术实验室,北京100124

出　　处：《应用物理前沿（中英文版）》2016年第1期1-7,共7页Applied Physics Frontier

摘　　要：对比了ICP刻蚀和湿法腐蚀制备台面型InP/InGaAs雪崩光电二极管(APD)时侧壁、表面形貌的不同,以及对暗电流和击穿电压的影响。在Cl2/Ar2/CH4条件下感应耦合等离子体(ICP)刻蚀InP会出现表面粗糙,对其原因进行了探究。并主要对ICP的刻蚀时间和刻蚀功率进行了优化,提高刻蚀表面的温度,保证了刻蚀的稳定性并改善了InP刻蚀表面的形貌,确定了稳定制备APD器件的刻蚀条件,最终制备出性能优良的台面型APD器件。The difference of the side wall and surface morphology about mesa-isolated InP/InGaAs avalanche photodiodes(APD),which were manufactured by ICP etching and wet etching respectively,was compared.And the influence of the dark current and breakdown voltage between ICP etching and wet etching was compared too.Under the conditions of Cl2/Ar2/CH4,the surface of InP with inductively coupled plasma(ICP)etching turned to be rough,and the cause of this formation was investigated.This paper mainly improved the surface morphology by optimizing the ICP etching time and power,which raised the temperature of the etched surface to ensure the stability of the etching and confirmed the stable conditions to manufacture In/InGaAs APD.And the mesa-isolated APD with good performance was finally manufactured.

关 键 词：雪崩光电二极管(APD) INP/INGAAS ICP 台面型 暗电流 

分 类 号：TN312.8[电子电信—物理电子学]