CdTe钝化膜溅射功率对HgCdTe器件性能的影响研究  

Study on the Influence of CdTe Passivation Film Sputtering Power on HgCdTe Device Performance

作　　者：林占文 韩福忠[1] 李雄军[1] 耿松[1] 史琪[1] 胡彦博[1] 杨超伟[1] 林阳 LIN Zhanwen;HAN Fuzhong;LI Xiongjun;GENG Song;SHI Qi;HU Yanbo;YANG Chaowei;LIN Yang(Kunming Institute of Physics,Kunming 650223,China)

机构地区：[1]昆明物理研究所,云南昆明650223

出　　处：《红外技术》2018年第8期733-738,共6页Infrared Technology

摘　　要：采用不同的溅射功率在长波HgCdTe(碲镉汞)薄膜表面沉积了CdTe钝化膜,制备了相应的MIS器件和二极管器件,并对器件进行了I-V测试和C-V测试,研究了溅射功率对CdTe钝化膜和器件性能的影响。结果表明,CdTe钝化膜溅射功率由140 W升高到180 W后,沉积速率显著增加,由3.5 nm/min增加到了9.5 nm/min;HgCdTe/钝化层界面固定电荷面密度增大,由2.43×10^(11) cm^(—2)增大到了2.83×10^(11) cm^(—2);慢界面态密度也随溅射功率的增加而增大。CdTe passivation films were deposited on the surface of a long-wavelength HgCdTe device using magnetron sputtering technology at different sputtering power and MIS and diode devices were then fabricated.The influence of sputtering power on CdTe passivation films and device performance was studied through the I-V and C-V tests.The results demonstrated that after CdTe passivation film sputtering power increased from 140 to 180 W,the deposition rate increased significantly from 3.5 to 9.5 nm/min,the interface fixed charge surface density of the HgCdTe/passivation film enlarged from 2.43×1011 cm-2 to 2.83×1011 cm-2,and the slow interface density increased.

关 键 词：长波碲镉汞 溅射功率 CdTe钝化膜 界面电学特性 I-V C-V 

分 类 号：TN215[电子电信—物理电子学]