硅衬底上多层Ge/ZnO纳米晶薄膜的制备及光学特性  

Preparation and Optical Properties of Multilayer Ge/ZnO Nanocrystalline Film on Silicon Substrate

作　　者：潘书万 庄琼云[2] 郑力新 PAN Shuwan;ZHUANG Qiongyun;ZHENG Lixin(College of Engineering,Huaqiao University,Quanzhou 362021,China;College of Information and Electronic Engineering,Liming Vocational University,Quanzhou 362000,China)

机构地区：[1]华侨大学工学院,福建泉州362021 [2]黎明职业大学信息与电子工程学院,福建泉州362000

出　　处：《华侨大学学报（自然科学版）》2018年第5期696-700,共5页Journal of Huaqiao University(Natural Science)

基　　金：福建省自然科学基金面上资助项目(2015J01655);福建省教育厅科研基金(A类)资助项目(JA14025;JA13429);福建省泉州市科技计划资助项目(2016G051);华侨大学科研基金资助项目(12BS226)

摘　　要：采用射频磁控溅射技术和快速热退火方法在Si(100)衬底上制备多层Ge/ZnO纳米晶薄膜.Ge纳米晶的大小随着退火温度的增加,从2.9nm增加到5.3nm.光致发光谱测试发现两个发光峰,分别位于1.48,1.60eV左右.研究发现:位于1.48eV处的发光峰来源于ZnO相关的氧空位或富锌结构的缺陷发光,位于1.60eV处的发光峰随着退火温度的增大向短波长移动,该发光峰应该来源于GeO发光中心.The multilayer Ge/ZnO nanocrystalline films were fabricated on Si(100)substrates by radio frequency magnetron sputtering and rapid thermal-annealing.The size of Ge nanocrystalline increased from 2.9 nm to 5.3 nm with increasing temperature.Two photoluminescence peaks located at 1.48 eV and 1.60 eV were observed.The study found that the peak located at 1.48 eV is attributed to the defects emission of the oxygen vacancies or zinc interstitial in ZnO,and the other peak located at 1.60 eV is attributed to the emission center of the GeO,which shifts to the short wavelength with the temperature increasing.

关 键 词：纳米晶 Ge/ZnO多层薄膜 硅衬底 光致发光 射频磁控溅射 快速热退火 

分 类 号：O472[理学—半导体物理]