离子束刻蚀辅助飞秒激光加工制备碳化硅微光学元件  

Ion Beam Etching Assisted Femtosecond Laser Machining to Manufacture Silicon Carbide Micro-optical Components

作　　者：于磊 杨双宁 刘学青[1,2] 李德辉 YU Lei;YANG Shuang-ning;LIU Xue-qing;LI De-hui;LI De-hui(State Key Laboratory on Integrated Optoelectronics,Jilin University,Changchun,130012,China;State Key Laboratory of Precision Measurement Technology and Instruments, Tsinghua University,Beijing,100084,China)

机构地区：[1]吉林大学集成光电子学国家重点实验室,长春130012 [2]清华大学精密测试技术及仪器国家重点实验室,北京100084

出　　处：《光子学报》2018年第12期45-50,共6页Acta Photonica Sinica

基　　金：国家重点研发计划(No.2017YFB1104600);国家自然科学基金(Nos.91423102,61590930,61435005);中国博士后科学基金(No.2018M631456)资助。

摘　　要：为了解决飞秒激光加工硬质材料所带来的表面质量差的问题,提出了离子束刻蚀与飞秒激光复合加工技术.利用飞秒激光加工技术在碳化硅表面制备微纳结构图形,然后通过离子束刻蚀技术对碳化硅微纳结构进行刻蚀,以调控结构的线宽和深度,使结构表面粗糙度由约106nm降低到11.8nm.研究表明,利用该技术制备的碳化硅菲涅尔波带片展现出良好的聚焦和成像效果.A hybrid technology combined ion beam etching and femtosecond laser machining was proposed for solving the problem of high surface roughness when processing of hard materials by femtosecond laser machining.First,silicon carbide micro/nano structures were fabricated by femtosecond laser machining.Then,the silicon carbide micro/nano structures were etched by ion beam etching.Ion beam etching can adjust the width and depth of the line structure,and reduce the surface roughness of the structures from about 106 nm to 11.8 nm.The silicon carbide Fresnel zone plate prepared by this technology exhibits well focusing and imaging properties.

关 键 词：超快激光 半导体加工技术 离子束刻蚀 碳化硅 微光学元件 

分 类 号：TN249[电子电信—物理电子学]