钝化处理对Al_2O_3/InP MOS电容界面特性的影响  

Effects of Passivation Process on the Interface Properties of Al_2O_3/InP MOS Capacitors

作　　者：李海鸥[1] 李玺 李跃[1] 刘英博 孙堂友 李琦[1] 李陈成 陈永和[1] Li Haiou;Li Xi;Li Yue;Liu Yingbo;Sun Tangyou;Li Qi;Li Chencheng;Chen Yonghe(Guangxi Key Laboratory of Precision Navigation Technology and Application , Guilin University ofElectronic Technology, Guilin 541004, China)

机构地区：[1]桂林电子科技大学广西精密导航技术与应用重点实验室,广西桂林541004

出　　处：《半导体技术》2019年第6期438-443,共6页Semiconductor Technology

基　　金：国家自然科学基金资助项目(61764001;61474031;61874036;61805053);广西自然科学基金重点基金资助项目(2016GXNSFDA380021);广西教育厅科研项目(2018KY0193);广西创新研究团队项目(2018JJF170001);广西精密导航技术与应用重点实验室资助项目(DH201801;DH201808;DH201702;DH201701);桂林电子科技大学研究生科研创新项目(2018YJCXB15;2018YJCX25)

摘　　要：制备了Al/Al_2O_3/InP金属氧化物半导体(MOS)电容,分别采用氮等离子体钝化工艺和硫钝化工艺处理InP表面。研究了在150、200和300 K温度下样品的界面特性和漏电特性。实验结果表明,硫钝化工艺能够有效地降低快界面态,在150 K下测试得到最小界面态密度为1.6×10^(10) cm^(-2)·eV^(-1)。与硫钝化工艺对比,随测试温度升高,氮等离子体钝化工艺可以有效减少边界陷阱,边界陷阱密度从1.1×10^(12) cm^(-2)·V^(-1)降低至5.9×10^(11) cm^(-2)·V^(-1),同时减少了陷阱辅助隧穿电流。氮等离子体钝化工艺和硫钝化工艺分别在降低边界陷阱和快界面态方面有一定优势,为改善器件界面的可靠性提供了依据。Al/Al2O3/InP metal oxide semiconductor ( MOS) capacitors were prepared, and InP surfaces were treated by the nitrogen plasma passivation and sulfur passivation process, respectively. The interface characteristics and leakage current of the samples were investigated at temperatures of 150, 200 and 300 K. The experimental results show that the fast interface states can be effectively reduced by the sulfur passivation process. The minimum interface state density of 1.6×10^10cm^-2·eV^-1 is obtained at 150 K. Compared with the sulfur passivation process , the border traps can be effectively reduced by the nitrogen plasma passivation process with the increase of the test temperature. The border trap density decreases from 1. 1×10^12 to 5. 9×10^11cm^-2 ? V^-1 , while the trap-assisted tunneling current is reduced. Nitrogen plasma passivation and sulfur passivation process have advantages in reducing border traps and fast in terface states which provide a basis for improving the reliability of the device interface.

关 键 词：氮等离子体钝化 硫钝化 界面态密度 边界陷阱密度 隧穿电流 

分 类 号：N305.2[自然科学总论]