界面处理对AlGaN/GaN MIS-HEMTs器件动态特性的影响  

Impact of Interface Treatment on Dynamic Characteristic of AlGaN/GaN MIS-HEMTs

作　　者：韩军 赵佳豪 赵杰 邢艳辉 曹旭 付凯[2] 宋亮[2] 邓旭光[2] 张宝顺[2] HAN Jun;ZHAO Jia-hao;ZHAO Jie;XING Yan-hui;CAO Xu;FU Kai;SONG Liang;DENG Xu-guang;ZHANG Bao-shun(Key Laboratory of Opto-electronics Technology,Ministry of Education,Beijing University of Technology,Beijing 100124,China;Key Laboratory of Nano Devices and Applications,Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences,Suzhou 215123,China)

机构地区：[1]北京工业大学信息学部光电子技术省部共建教育部重点实验室,北京100124 [2]中国科学院苏州纳米技术与纳米仿生研究所纳米器件与应用重点实验室,江苏苏州215123

出　　处：《发光学报》2019年第7期915-921,共7页Chinese Journal of Luminescence

基　　金：国家自然科学基金(61204011,11204009,61574011);北京市自然科学基金(4142005,4182014);北京市教委科学研究基金(PXM 2018_014204_500020)资助项目~~

摘　　要：研究不同界面处理对AlGaN/GaN金属-绝缘层-半导体(MIS)结构的高电子迁移率晶体管(HEMT)器件性能的影响。采用N2和NH3等离子体对器件界面预处理,实验结果表明,N2等离子体预处理能够减小器件的电流崩塌,通过对N2等离子体预处理的时间优化,发现预处理时间10min能够较好地提高器件的动态特性,30min时动态性能下降。进一步引入AlN作为栅介质插入层并经过高温热退火后能够有效提高器件的动态性能,将器件的阈值回滞从411mV减小至111mV,动态测试表明,在900V关态应力下,器件的电流崩塌因子从42.04减小至4.76。The effects of different kinds of interface treatment on the characteristic of AlGaN/GaN MIS-HEMTs were studied in this paper. N2 and NH 3 plasma pretreatment were used to improve the interface quality. The results show that N2 plasma pretreatment could reduce the current collapse of devices. By optimizing the time of N2 plasma pretreatment,it was found that the dynamic characteristic of devices with 10 min the pretreatment was improved,while that of 30 min was degraded. As a gate dielectric intercalation layer,the annealed AlN interlayer can effectively improve the dynamic characteristic of the device. The Vth hysteresis was decreased from 411 mV to 111 mV,and the device current collapse factor was reduced from 42.04 to 4.76 after under OFF-state VD stress of 900.

关 键 词：电流崩塌 AlN栅介质插入层 界面处理 ALGAN/GAN高电子迁移率晶体管 

分 类 号：TN386.2[电子电信—物理电子学]