红外光电晶体管结构参数优化及温度稳定性研究  

Optimization of structural parameters and temperature stability of infrared phototransistors

作　　者：王宁[1] 李伟[1] 范文兵[2] 郭海松 WANG Ning;LI Wei;FAN Wenbing;GUO Haisong(School of Information Engineeing,Huanghe S&T University,Zhengzhou 450006,China;School of Information Engineeing,Zhengzhou University,Zhengzhou 450006,China)

机构地区：[1]黄河科技学院信息工程学院,河南郑州450006 [2]郑州大学信息工程学院,河南郑州450006

出　　处：《电子元件与材料》2019年第7期55-62,共8页Electronic Components And Materials

基　　金：河南省第九批重点学科:通信与信息系统(教高[2017]765号);河南省科技厅科技攻关计划(社会发展类)(172102310634);郑州市科技局科技攻关计划(20150339)

摘　　要：基于非等温能量传输模型,利用TCAD半导体器件仿真软件对红外光电晶体管外延层电阻率、基区表面浓度和基区宽度参数进行优化设计。根据不同环境温度情况下AlGaAs/GaAs发光二极管的发光强度,深入分析了光电晶体管结构参数对不同环境温度下电流传输比及其温度变化率的影响。仿真结果表明:减小基区表面浓度和基区宽度有利于提高电流传输比的温度稳定性。相比于高温情况,低温下不同发射区表面浓度情况下的电流传输比温度变化率几乎相同。虽然发光二极管的光强随着温度的升高而降低,但是光电晶体管集电极电流始终低于发生大注入效应时的临界集电极电流,导致随着温度升高,光电晶体管电流传输比随之增大。Based on the non-isothermal energy transfer model,the resistivity of epitaxial layer,surface concentration of the base and base width of infrared phototransistor were optimized using the TCAD semiconductor device simulation software.Based on the luminescence intensity of AlGaAs/GaAs LEDs at different ambient temperatures,we analyzed the effect of the structural parameters of the phototransistor on the current transfer ratio,and we also studied the temperature ramp rate at different ambient temperatures.The simulation results show that lower surface concentration and smaller base width can help improve the temperature stability of current transfer ratio.Compared with the case at high temperature,the ramp rate of current transfer ratio at low temperature is almost the same at different surface concentration.Although the light intensity of the LEDs decreases as the temperature increases,the collector current of the phototransistor is always lower than the critical collector current when the large injection effect occurs,resulting in higher phototransistor current transfer ratio at higher temperature.

关 键 词：光电晶体管 结构参数 电流传输比 击穿电压 饱和压降 温度稳定性 优化 

分 类 号：TK514[动力工程及工程热物理—热能工程]