基于50 nm AlN/GaN异质结的G波段放大器  

G-band Amplifier Based on 50 nm AlN/GaN Heterojunction

作　　者：张政[1] 焦芳[1] 吴少兵[1,2] 张凯 李忠辉 陆海燕 陈堂胜 ZHANG Zheng;JIAO Fang;WU Shaobing;ZHANG Kai;LI Zhonghui;LU Haiyan;CHEN Tangsheng(Nanjing Electronic Devices Institute,Nanjing,210016,CHN;Science and Technology on Monolithic Integrated Circuits and Modules Laboratory,Nan jing,210016,CHN)

机构地区：[1]南京电子器件研究所,南京210016 [2]微波毫米波单片集成和模块电路重点实验室,南京210016

出　　处：《固体电子学研究与进展》2019年第3期155-158,193,共5页Research & Progress of SSE

摘　　要：报道了基于50nm栅工艺的AlN/GaN异质结的G波段器件结果。在AlN/GaNHEMT外延结构上,采用电子束直写工艺制备了栅长50nm的"T"型栅结构。器件直流测试最大漏电流为2.1A/mm,最大跨导为700mS/mm;小信号测试外推其电流增益截止频率和最大振荡频率分别为180GHz及350GHz。采用该工艺制备的共面波导(CPW)结构的放大器工作电压6V,在162GHz小信号增益大于10dB。166GHz连续波峰值输出功率11.36dBm,功率密度达到684mW/mm,功率密度水平达到GaN器件在G频段的高水平。The results of the G-band device based on the 50 nm gate process and the AlN/GaN heterojunction were reported. Electron-beam lithography was employed to fabricate a 50 nm T-shaped gate on the AlN/GaN HEMT epitaxial structure. The device exhibits a maximum DC drain current of 2.1 A/mm and a maximum trans-conductance of 700 mS/mm. An extrinsic current gain cutoff frequency of 180 GHz and maximum oscillation frequency of 350 GHz are deduced from small signal measurements. At the bias of 6 V, the CPW amplifier fabricated from this process offers a small signal gain of greater than 10 dB at 162 GHz. The peak output power achieves 11.36 dB continuous-wave mode at 166 GHz, with associated power density is 684 mW/mm. The power density achieves a high level for the GaN device at the G-band.

关 键 词：GAN高电子迁移率晶体管 G波段 电子束直写 功率放大器 

分 类 号：TN492[电子电信—微电子学与固体电子学]