低温铝诱导非晶硅晶化的热力学机理研究  

Thermodynamic Study on the Aluminum-induced Crystallization of Amorphous Silicon

作　　者：张力元[1,2] 杨雯 段良飞[1] 杨培志[1] 杜凯翔[1] ZHANG Li-yuan;YANG Wen;DUAN Liang-fei;YANG Pei-zhi;DU Kai-xiang(Key Laboratory of Advanced Technigue & Preparation for Renewable Energy Materials of the Ministry of Education of China,Yunnan Normal University,Kunming 650500,China;Yunnan Provincial Academy of Materials and Manufacturing Science and Technology,Kunming 650051,China)

机构地区：[1]云南师范大学可再生能源材料先进技术与制备教育部重点实验室,云南昆明650500 [2]云南省科学技术院,云南昆明650051

出　　处：《云南师范大学学报（自然科学版）》2019年第5期15-20,共6页Journal of Yunnan Normal University:Natural Sciences Edition

基　　金：云南科技计划重点资助项目(2017FA024);国家自然科学基金云南联合基金资助项目(U1802257);云南省高校科技创新团队支持计划资助项目

摘　　要：采用磁控溅射方法沉积了Al/Si薄膜,通过自然氧化形成中间层,再结合快速光热退火制备出微晶硅.研究了铝诱导非晶硅晶化的两个热力学过程:Si的扩散和Si的形核长大.利用拉曼散射光谱仪和X射线衍射仪对薄膜进行了结构表征.结果表明:在铝诱导非晶硅的晶化过程中引入中间氧化层,有利于改善晶化效果,获得晶粒较大且结构均匀的薄膜;低温下,温度对Si的扩散起决定作用,过厚的氧化层会阻碍Si的扩散,使其浓度不能达到临界形核浓度,无法使非晶硅晶化;较大的Al晶粒及Al对Si晶粒的“润湿”能在低温下诱导非晶硅晶化.Based on the Al/Si thin films,the microcrystalline silicon was prepared by using Magnetron sputtering and Rapid photothermal annealing technique.Preparation parameters such as substrate temperatures and annealing time and temperature were studied.Through natural oxidation of Al film preparation of the middle oxide layer.Explore the diffusion rule of Silicon.Try to annealing crystallization by the low temperature.According to the thermodynamic theory of thin film growth,we researched two of the amorphous silicon crystallization process,one is the diffusion of the silicon,another is its nucleation and grew up.It were characterized by Profile-system,Raman scattering spectroscopy(Raman) and X-ray diffraction(XRD).The results show that the middle oxide layer make crystallization well,and larger grain and uniform structure film are gained,but too thick oxide layer will block the diffusion of the silicon,and the amorphous silicon cannot be crystallized.At low temperatures,the diffusion rate of silicon depends on the temperature.Bigger Al grain will cause the ′Wetting effect′ which induce Si nucleation at low temperatures.

关 键 词：非晶硅薄膜 磁控溅射 铝诱导晶化 热力学机理 中间氧化层 

分 类 号：O751[理学—晶体学]