厚膜金导体上Au80Sn20共晶焊接工艺研究  

Study on Au80Sn20 Eutectic Welding Process on Gold Thick Film Conductor

作　　者：董晓伟[1] 王超[1] 郑静[1] DONG Xiao-Wei;WANG-Chao;ZHENG-Jing(No.43 Research Institute of CETC,Hefei 230088,China)

机构地区：[1]中国电子科技集团公司第43研究所,合肥230088

出　　处：《混合微电子技术》2019年第2期22-27,53,共7页Hybrid Microelectronics Technology

摘　　要：本文以厚膜金导体上AU80Sn20共晶焊接工艺为研究对象,分别分析了不同焊接方式、焊接温度曲线、助焊剂、焊接压力、焊片厚度、芯片尺寸等对焊接效果的影响,得到了厚膜金导体上Au80Sn20共晶焊接的最优工艺窗口。在此基础上,通过剖面分析技术研究了厚膜金导体上Au80Sn20共晶焊接合金层的微观结构,以及不同环境实验对其合金层结构的影响,结果表明厚膜金导体上Au80Sn20共晶焊接的可靠性较高,满足H级厚膜混合集成电路项目使用需求。In this paper, the Au80Sn20 eutectic welding process on thick film gold conductor was taken as the research object, and the influences of different welding methods, welding temperature curve, flux, welding pressure, thickness of welding sheet and chip size on the welding effect were analyzed, and the optimal welding process window of Au80Sn20 eutectic welding process on gold thick film conductor was obtained. On this basis, the microstructure of Au80Sn20 eutectic welded alloy on gold thick film conductor and the effect of different environmental experiment on the alloy layer structure were studied by profile analysis technology, and the results showed that the reliability of Au80Sn20 eutectic welding process on gold thick film conductor was relatively high, which met the application requirements of H-Class thick film hybrid integrated circuit project.

关 键 词：混合集成电路 Au80Sn20 厚膜金导体 共晶焊接 

分 类 号：TN405.96[电子电信—微电子学与固体电子学]