硅中吸除技术的物理机制  

Physical Mechanism of Gettering in Silicon

作　　者：陈畅生[1] 

机构地区：[1]武汉大学物理系,武汉430072

出　　处：《Journal of Semiconductors》1992年第3期174-180,共7页半导体学报（英文版）

摘　　要：本文探讨了吸除过程中,各种不同的吸除技术在硅片的底面或内部产生的吸除源凝聚金属杂质的阱作用和发射自隙原子的源作用,以及代位金属原子在含有吸除源的硅中的扩散行为.导出了表征硅中吸除源吸除金属杂质机制的吸除方程组,并用之具体计算了不同的底面吸除源对金杂质的吸除作用.理论结果较好地解释了各种吸除技术的吸除性质,为实际硅器件工艺选择最佳吸除条件提供了理论依据.Two basic functions of getters in silicon during gettering process are investigated in de-tail. Based on the interactions of Si_1 with impurity and the influence of the sink in absorbingimpurities, a set of gettering equations is derived and is used to calculate the gettering of goldin silicon with back surface getters. The theoretical results are in good agreement with the ex-perimental data and five conclusions are provided to determine the optimal gettering condi-tions for a given gettering.

关 键 词：硅片 吸除技术 物理机制 金属杂质 

分 类 号：TN304.12[电子电信—物理电子学]