宽束离子源的均匀性分析  

Uniformity Analysis for Broad-beam Ion Source

作　　者：刘洪祥[1] 张云洞[1] 李凌辉[1] 熊胜明[1] 

机构地区：[1]中科院光电技术研究所,成都四川610209

出　　处：《光电工程》2002年第5期59-61,共3页Opto-Electronic Engineering

基　　金：国家863高技术项目资助

摘　　要：在离子束溅射和离子辅助沉积光学薄膜技术中,离子源是其中最关键的单元技术之一。通 过测试宽束离子源束流密度的空间分布,研究了影响离子束均匀性分布的两个主要因素:加速电压和E/B。结果表明,随着加速电压的增加,离子束束流密度的分布趋向均匀;而E/B对离子束均匀性的影响不大。In ion-beam sputtering deposition and ion-beam aid deposition thin film techniques, ion-beam source is one of the key techniques. Through testing density and spatial distribution of the broad-beam ion source, two main factors-accelerating voltage and E/B affecting uniformity distribution of ion-beam are studied. The results show that the ion-beam density distribution will tend to uniform with the increasing of accelerating voltage. The influence of E/B on ion-beam uniformity is small.

关 键 词：离子束溅射 离子源 均匀性 光学薄膜 

分 类 号：O484.1[理学—固体物理]