100 nm GaN基6～18 GHz低噪声放大器的研制  

Research and Development of a 6-18 GHz Low Noise Amplifier Based on 100 nm GaN

作　　者：李建平[1] 吴少兵[1] LI Jianping;WU Shaobing(Nanjing Electronic Devices Institute,Nanjing 210016,China)

机构地区：[1]南京电子器件研究所

出　　处：《电子与封装》2019年第9期28-31,47,共5页Electronics & Packaging

摘　　要：基于南京电子器件研究所的100nm GaN高电子迁移率晶体管(HEMT)工艺,研制了6~18GHz宽带低噪声放大器。低噪声单片电路采用了三级结构,偏置电压为12V,电流约为70mA时,在6~18GHz频带内噪声系数小于1.7dB,增益大于25dB,驻波比小于2,1 dB增益压缩点输出功率带内最小值约为10dBm。前两级采用电流复用结构,降低了功耗;后级采用并联反馈结构,改善带内增益平坦度。芯片尺寸为2.0mm×1.35mm。Based on 100nm GaN high electron mobility transistor(HEMT)technology of Nanjing Electronic Devices Institute,a 6-18GHz low noise amplifier(LNA)was designed and fabricated.The low noise monolithic circuit has been designed using a 3-stage topology.Under the condition of 12V voltage and 70 mA current,measured results show that the noise figure is below 1.7dB within the bandwidth of 6-18GHz,the small signal gain is higher than 25 dB,voltage standing wave ratio is less than 2,and output power at 1dB gain compression point is more than 10 dBm.Current reused technology were adopted by the first two stage,which decreased the DC consumer;the last stage used parallel feedback structure to improve the gain flatness.The chip dimension is 2.0mm×1.35mm.

关 键 词：氮化镓 宽带 低噪声放大器 

分 类 号：TN722.3[电子电信—电路与系统]