浅沟槽隔离对MOSFET电学特性的影响  

Influence of Shallow Trench Isolation on Electrics Characteristic in MOSFET

作　　者：张海峰 刘芳 陈燕宁 原义栋 付振 ZHANG Haifeng;LIU Fang;CHEN Yanning;YUAN Yidong;FU Zhen(State Grid Key Laboratory of Power Industrial Chip Design and Analysis Technology,Beijing Smart-Chip Microelectronics Technology Co.,Ltd.,Beijing 100192,China;Beijing Engineering Research Center of High-Reliability IC with Power Industrial Grade,Beijing Smart-Chip Microelectronics Technology Co.,Ltd.,Beijing 100192,China)

机构地区：[1]北京智芯微电子科技有限公司,国家电网公司重点实验室电力芯片设计分析实验室,北京100192 [2]北京智芯微电子科技有限公司,北京市电力高可靠性集成电路设计工程技术研究中心,北京100192

出　　处：《电子与封装》2019年第9期43-47,共5页Electronics & Packaging

摘　　要：随着工艺制程的不断进展,浅沟槽隔离技术(STI)成为深亚微米后的主流隔离技术。文章通过测试分析不同栅到有源区距离(SA)晶体管(MOSFET)器件的栅和衬底电流,分析了180nm N沟道晶体管中STI对于栅和衬底电流的影响。结果表明栅电流随着SA的缩小呈现先缩小后增大的趋势,衬底电流在常温以及高温下都随着SA的减小而减小。文章用应力机制导致的迁移率以及载流子浓度的变化对栅和衬底电流的变化趋势进行了分析,通过改进伯克利短沟道绝缘栅场效应晶体管模型(BSIM)模拟了STI对衬底电流的影响,为设计人员进行低功耗设计提供了衬底电流模型。With the rapid development of the CMOS technology,shallow trench isolation(STI)has become a major concern in recent years.This paper analyzed the influence of STI on gate and substrate current through testing current in different MOS devices with different SA distances between gate edge and active region edge.The results show that gate current decreases as SA instance decreases initially and increases afterwards.The results also show that the substrate current always decreases as SA instance decreases under high and normal temperature.The reason of gate and bulk currents changing with STI is due to mobility and barrier changing with STI.The influence of STI on substrate current is fitted by improved universal Berkeley short-channel IGFET model(BSIM).Substrate model is provided to designer for low power designing.

关 键 词：栅电流 浅沟槽隔离 隧穿 能带结构 

分 类 号：TN432[电子电信—微电子学与固体电子学]